FA57SA50LC, FA581103AJ0A, FA6 36Y Selling Leads, Datasheet
MFG:NULL D/C:07+
FA57SA50LC, FA581103AJ0A, FA6 36Y Datasheet download
Part Number: FA57SA50LC
MFG: NULL
Package Cooled:
D/C: 07+
FA57SA50LC, FA581103AJ0A, FA6 36Y
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Info of FA57SA50LC
Info of FA581103AJ0A
Info of FA6 36Y
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About FA57SA50LC
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Datasheet: FA57SA50LC
File Size: 134865 KB
Manufacturer: IRF [International Rectifier]
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About FA5301
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Datasheet: FA5301
File Size: 65545 KB
Manufacturer: FUJI [Fuji Electric]
Download : Click here to Download
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FA57SA50LC General Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOT-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry.
FA57SA50LC Maximum Ratings
| Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
57 |
A |
| ID @ TC =100°C | Continuous Drain Current, VGS @ 10V |
36 | |
| IDM |
Pulsed Drain Current |
228 | |
| PD @TC=25 | Power Dissipation |
625 |
W |
| Linear Derating Factor |
5.0 |
W/ | |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| EAS |
Single Pulse Avalanche Energy |
725 |
mJ |
| IAR |
Avalanche Current |
57 |
A |
| EAR |
Repetitive Avalanche Energy |
62.5 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
3.0 |
V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C |
| VISO | Insulation Withstand Voltage (AC-RMS) |
2.5 |
kV |
| Mounting torque, M4 srew |
1.3 |
N*m |
FA57SA50LC Features
Fully Isolated Package
Easy to Use and Parallel
Low On-Resistance
Dynamic dv/dt Rating
Fully Avalanche Rated
Simple Drive Requirements
Low Gate Charge Device
Low Drain to Case Capacitance
Low Internal Inductance
Easy to Use and Parallel
Low On-Resistance
Dynamic dv/dt Rating
Fully Avalanche Rated
Simple Drive Requirements
Low Gate Charge Device
Low Drain to Case Capacitance
Low Internal Inductance
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