F1005, F1007, F1008 Selling Leads, Datasheet
MFG:Polyfet Package Cooled:N/A D/C:N/A
F1005, F1007, F1008
- Table of contents:
Info of F1005
Info of F1007
Info of F1008
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About F1005
PDF/DataSheet Download
Datasheet: F1005
File Size: 38885 KB
Manufacturer: POLYFET [Polyfet RF Devices]
Download : Click here to Download
About F1007
PDF/DataSheet Download
Datasheet: F1007
File Size: 39335 KB
Manufacturer: POLYFET [Polyfet RF Devices]
Download : Click here to Download
About F1008
PDF/DataSheet Download
Datasheet: F1008
File Size: 39243 KB
Manufacturer: POLYFET [Polyfet RF Devices]
Download : Click here to Download
F1005 General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"TM process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
"Polyfet"TM process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
F1005 Maximum Ratings
| Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
| 150 Watts | 1.2 /W | 200 | -65 to 150 | 8 A | 70V | 70V | 30V |
F1007 General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"TM process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
"Polyfet"TM process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
F1007 Maximum Ratings
| Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
| 100 Watts | 1.75/W | 200 | -65 to 150 | 4 A | 70V | 70V | 30V |
F1008 General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"TM process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
"Polyfet"TM process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
F1008 Maximum Ratings
| Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
| 170 Watts | 1.05/W | 200 | -65 to 150 | 8 A | 70V | 70V | 30V |
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