ER614-R8, ER802F, ER8G4 Selling Leads, Datasheet
MFG:NO Package Cooled:DIP D/C:2005+
ER614-R8, ER802F, ER8G4 Datasheet download
Part Number: ER614-R8
MFG: NO
Package Cooled: DIP
D/C: 2005+
ER614-R8, ER802F, ER8G4
- Table of contents:
Info of ER614-R8
Info of ER802F
Info of ER8G4
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About ER602DC
PDF/DataSheet Download
Datasheet: ER602DC
File Size: 156427 KB
Manufacturer: TRSYS [TRSYS]
Download : Click here to Download
About ER802F
PDF/DataSheet Download
Datasheet: ER802F
File Size: 49952 KB
Manufacturer: TRSYS [TRSYS]
Download : Click here to Download
About ER800
PDF/DataSheet Download
Datasheet: ER800
File Size: 48358 KB
Manufacturer: TRSYS [TRSYS]
Download : Click here to Download
ER802F Maximum Ratings
ER800F |
ER801F |
ER801AF |
ER802F |
ER803F |
ER804F |
UNITS |
|
| Maximum Recurrent Peak Reverse Voltage | 50 |
100 |
150 |
200 |
300 |
400 |
V |
| Maximum RMS Voltage | 35 |
70 |
105 |
140 |
210 |
320 |
V |
| Maximum DC Blocking Voltage | 50 |
100 |
150 |
200 |
300 |
400 |
V |
| Maximum Average Forward Rectified Current at TC=100 |
8.0 |
A |
|||||
| Peak Forward Surge Current, 8.3ms single half sine-wave superimposed on rated load(JEDEC method) |
125 |
A |
|||||
| Maximum Forward Voltage at 8.0A per element |
0.95 |
1.30 |
V |
||||
| Maximum DC Reverse Current at Ta=25 DC Blocking Voltage per element Ta=125 |
10 500 |
A |
|||||
| Typical Junction capacitance (Note 1) | 62 |
PF |
|||||
| Maximum Reverse Recovery Time(Note 2) | 35 |
50 |
ns |
||||
| Typical Junction Resistance(Note 3) R JC | 3.0 |
/W |
|||||
| Operating and Storage Temperature Range TJ | -55 to +150 |
||||||
ER802F Features
· Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound
· Exceeds environmental standards of MIL-S-19500/228
· Low power loss, high efficiency
· Low forward voltage, high current capability
· High surge capacity
· Super fast recovery times, high voltage
· Epitaxial chip construction
· Exceeds environmental standards of MIL-S-19500/228
· Low power loss, high efficiency
· Low forward voltage, high current capability
· High surge capacity
· Super fast recovery times, high voltage
· Epitaxial chip construction
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