DTV1500HF, DTV1500HFP, DTV1500HXX Selling Leads, Datasheet
MFG:ST/VISHAY Package Cooled:09+ D/C:TO
DTV1500HF, DTV1500HFP, DTV1500HXX Datasheet download
Part Number: DTV1500HF
MFG: ST/VISHAY
Package Cooled: 09+
D/C: TO
DTV1500HF, DTV1500HFP, DTV1500HXX
- Table of contents:
Info of DTV1500HF
Info of DTV1500HFP
Info of DTV1500HXX
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About DTV1500HF
PDF/DataSheet Download
Datasheet: DTV1500HF
File Size: 92034 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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About DTV1500HFP
PDF/DataSheet Download
Datasheet: DTV1500HFP
File Size: 92034 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About DTV1500HXX
PDF/DataSheet Download
Datasheet: DTV1500HXX
File Size: 92034 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
DTV1500HXX General Description
High voltage diode especially designed forhorizontal deflection stage in standard and highresolution displays for TV's and monitors.
This device is packaged in TO-220AC,ISOWATT220AC and TO-220FPAC (insulatedpackage).
DTV1500HXX Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit | |
|
VRRM |
Repetitive peak reverse voltage |
1500 |
V | |
|
IF(RMS) |
RMS forward current |
15 |
A | |
|
IFSM |
Surge non repetitive forward current |
tp = 10mssinusoidal |
50 |
A |
|
Tstg |
Storage temperature |
- 65 to 150 |
||
|
Tj |
Maximum operating junction temperature |
150 |
||
DTV1500HXX Features
High breakdown voltage capability
High frequency operation
Specified turn on switching characteristics
Very fast recovery diode
Low static and peak forward voltage drop for lowdissipation
Insulated package (ISOWATT220AC & TO-220FPAC):
Insulating voltage = 2000V DC
Capacitance = 12pF
Planar technology allowing high quality and bestelectrical characteristics
High frequency operation
Specified turn on switching characteristics
Very fast recovery diode
Low static and peak forward voltage drop for lowdissipation
Insulated package (ISOWATT220AC & TO-220FPAC):
Insulating voltage = 2000V DC
Capacitance = 12pF
Planar technology allowing high quality and bestelectrical characteristics
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