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DTC114ESA, DTC114ESATP, DTC114ES-TP

Table of contents:
Info of DTC114ESA
Info of DTC114ESATP
Info of DTC114ES-TP

DTC114ESA, DTC114ESATP, DTC114ES-TP Selling Leads, Datasheet

MFG:Rohm Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-92 D/C:05+

DTC114ESA, DTC114ESATP, DTC114ES-TP Datasheet download

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Part Number: DTC114ESATP

Category: Discrete Semiconductor Products

MFG: Rohm Semiconductor

Package Cooled: TO-92

D/C: 05+

Description: TRANSISTOR NPN 50V 50MA SPT TB

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DTC114ESA Maximum Ratings

Paramete	Symbol	Limits(DTC114E)						Unit
		M	E	UA	CA	KA	SA
Supply voltage	V_CC	-50						V
Input voltage	V_IN	-10~+40						V
Output current	I_O	50						mA
	I_C(Max.)	100
Power dissipation	P_d	150		200		300		mW
Junction temperature	T_j	150
Storage temperature	T_stg	-55~+150

DTC114ESA Features

1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making device design easy.

DTC114ESATP Parameters

Technical/Catalog Information	DTC114ESATP
Vendor	Rohm Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	50mA
Power - Max	300mW
Resistor - Base (R1) (Ohms)	10K
Resistor - Emitter Base (R2) (Ohms)	10K
Vce Saturation (Max) @ Ib, Ic	300mV @ 500A, 10mA
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 5V
Frequency - Transition	250MHz
Mounting Type	Through Hole
Package / Case	SC-72-3, SPT
Packaging	Tape & Box (TB)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	DTC114ESATP DTC114ESATP

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