Specifications Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc Total Power Dissipation@ TA = 25°C (1.) Derate above 25°C PD 3502.81 mWmW/°CD...
DTC114E: Specifications Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100...
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Rating |
Symbol |
Value |
Unit |
Collector-Base Voltage |
VCBO |
50 |
Vdc |
Collector-Emitter Voltage |
VCEO |
50 |
Vdc |
Collector Current |
IC |
100 |
mAdc |
Total Power Dissipation |
PD |
350 |
mW |
This new series of DTC114E digital transistors is designed to replace a single device and its external resistor bias network. The DTC114E BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the TO92 package which is designed for through hole applications.