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This new series of GaAs Schottky barrier diodes offer high performance at commercial market prices. They are designed for low junction capacitance, as well as low series resistance.Diodes are designed for MIC work (hard and soft substrates), but the leadless design eliminates the problems associated with mounting of beam lead diodes. Due to its rigid construction, it exceeds environmental requirements for MIC and hybrid applications.Diodes can be supplied on expandable film frame for high speed pick and place process.Standard packing will be in a gel pack. Flexible conductive epoxy is the most effective method for circuitry attachments. Standard mounting temperatures should not exceed 175
DMK2308-000 Maximum Ratings
Designed for high volume designs
High frequency (20100 GHz)
Exceeds environmental requirements for MIC & hybrid applications
Designed for low junction capacitance and low series resistance
Applications include PCN mixers and circuits, as well as low power, fast switching
DMK2308-000 Features
Designed for High Volume Designs High Frequency (20100 GHz) Exceeds Environmental Requirements for MIC & Hybrid Applications Designed for Low Junction Capacitance and Low Series Resistance Applications Include PCN Mixers and Circuits, As Well As Low Power, Fast Switching Low Parasitic Flip Chip Configuration