DG612, DG612A, DG612AA Selling Leads, Datasheet
MFG:Vishay Package Cooled:miniQFN-16 D/C:2010+
DG612, DG612A, DG612AA Datasheet download
Part Number: DG612
MFG: Vishay
Package Cooled: miniQFN-16
D/C: 2010+
DG612, DG612A, DG612AA
- Table of contents:
Info of DG612
Info of DG612A
Info of DG612AA
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About DG612
PDF/DataSheet Download
Datasheet: DG612
File Size: 93286 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
About DG612AK/883
PDF/DataSheet Download
Datasheet: DG612AK/883
File Size: 93286 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
About DG611
PDF/DataSheet Download
Datasheet: DG611
File Size: 93286 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
DG612 General Description
The DG611/612/613 feature high-speed low-capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications.
Each switch conducts equally well in both directions when on and blocks up to 16 Vp-p when off. Capacitances have been minimized to ensure fast switching and low-glitch energy. To achieve such fast and clean switching performance, the DG611/612/613 are built on the Vishay Siliconix proprietary D/CMOS process. This process combines n-channel DMOS switching FETs with low-power CMOS control logic and drivers. An epitaxial layer prevents latchup.
DG612 Maximum Ratings
V+ to V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to 21 V
V+ to GND . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . 0.3 V to 21 V
V to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 V to 0.3 V
VL to GND . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . 1 V to (V+) + 1 V
or 20 mA, whichever occurs first
VINa . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . (V) 1 V to (V+) + 1 V
or 20 mA, whichever occurs first
VS, VDa . . . . . . . . . . . . . . . . . . . . . . . . . . (V) 0.3 V to (V) + 16 V
or 20 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . ±30 mA
Current, S or D (Pulsed at 1 s, 10% Duty Cycle) . . . . . . . .±100 mA
Storage Temperature: CerDIP . . . . . . . . . . . . . ... . . . . . 65 to 150
Plastic . . . . . . . . . . . . . . . . . .. . . 65 to 125
Power Dissipation (Package)b
16-Pin Plastic DIPc . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . 470 mW
16-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
20-Pin LCCe . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . 900 mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/ above 75
d. Derate 7.6 mW/ above 75
e. Derate 12 mW/ above 75
V+ to GND . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . 0.3 V to 21 V
V to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 V to 0.3 V
VL to GND . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . 1 V to (V+) + 1 V
or 20 mA, whichever occurs first
VINa . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . (V) 1 V to (V+) + 1 V
or 20 mA, whichever occurs first
VS, VDa . . . . . . . . . . . . . . . . . . . . . . . . . . (V) 0.3 V to (V) + 16 V
or 20 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . ±30 mA
Current, S or D (Pulsed at 1 s, 10% Duty Cycle) . . . . . . . .±100 mA
Storage Temperature: CerDIP . . . . . . . . . . . . . ... . . . . . 65 to 150
Plastic . . . . . . . . . . . . . . . . . .. . . 65 to 125
Power Dissipation (Package)b
16-Pin Plastic DIPc . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . 470 mW
16-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
20-Pin LCCe . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . 900 mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/ above 75
d. Derate 7.6 mW/ above 75
e. Derate 12 mW/ above 75
DG612 Features
Fast Switching- tON: 12 ns
Low Charge Injection:±2 pC
Wide Bandwidth: 500 MHz
5-V CMOS Logic Compatible
Low rDS(on): 18
Low Quiescent Power : 1.2 nW
Single Supply Operation
Low Charge Injection:±2 pC
Wide Bandwidth: 500 MHz
5-V CMOS Logic Compatible
Low rDS(on): 18
Low Quiescent Power : 1.2 nW
Single Supply Operation
DG612 Typical Application
Fast Sample-and-Holds
Synchronous Demodulators
Pixel-Rate Video Switching
Disk/Tape Drives
DAC Deglitching
Switched Capacitor Filters
GaAs FET Drivers
Satellite Receivers
Synchronous Demodulators
Pixel-Rate Video Switching
Disk/Tape Drives
DAC Deglitching
Switched Capacitor Filters
GaAs FET Drivers
Satellite Receivers
DG612 Connection Diagram
DG612A General Description
1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches
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