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DB-960-60W, DB-960-70W, DB-960-90W

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Part Number: DB-960-60W

 

MFG: ST

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About DB-960-60W

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Datasheet: DB-960-60W

File Size: 648390 KB

Manufacturer: STMicroelectronics

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DB-960-70W Suppliers

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About DB-960-70W

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Datasheet: DB-960-70W

File Size: 312122 KB

Manufacturer: STMicroelectronics

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About DB-960-90W

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Datasheet: DB-960-90W

File Size: 312903 KB

Manufacturer: STMicroelectronics

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DB-960-60W General Description

The DB-960-60W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for GSM / GPRS / EDGE base station applications.

The DB-960-60W is designed in cooperation with Européenne de Télécommunications S.A (www.etsa.fr), for high gain and broadband performance operating in common source mode at 26 V, capable of withstanding load mismatch up to 10:1 all phases and with harmonics lower than 30 dBc.

DB-960-60W Maximum Ratings

Symbol Parameter Value Unit
VDD Supply voltage 32 V
ID Drain Current 8 A
PDISS Power Dissipation 95 W
TCASE Operating Case Temperature -20 to +85 °C
Tamb Max. Ambient Temperature +55 °C

DB-960-60W Features

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 60 W min. with 13 dB gain over
   925 - 960 MHz
• 10:1 LOAD VSWR CAPABILITY
• BeO FREE AMPLIFIER.

DB-960-70W General Description

The DB-960-70W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for GSM & E-GSM base station applications.

The DB-960-70W is designed in cooperation with Européenne de Télécommunications S.A (www.etsa.fr), for high gain and broadband performance operating in common source mode at 26 V, capable of withstanding load mismatch up to 10:1 all phases and with harmonics lower than 30 dBc.

DB-960-70W Maximum Ratings

Symbol Parameter Value Unit
VDD Supply voltage 32 V
ID Drain Current 9 A
PDISS Power Dissipation 135 W
TCASE Operating Case Temperature -20 to +85 °C
Tamb Max. Ambient Temperature +55 °C

DB-960-70W Features

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 70 W min. with 13 dB gain over 925-960
   MHz
• 10:1 LOAD VSWR CAPABILITY
• BeO FREE AMPLIFIER.

DB-960-90W General Description

The DB-960-90W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for GSM/GPRS/EDGE base station applications.

The DB-960-90W is designed in cooperation with Europeenne de Telecomunications S.A. (www.etsa. rf), for high gain and broadband performance operating in common source mode at 26 V, capable of withstanding load mismatch up to 10:1 all phases and with harmonics lower than 30 dBc.

DB-960-90W Maximum Ratings

Symbol Parameter Value Unit
VDD Supply voltage 32 V
ID Drain Current 12 A
PDISS Power Diss. at Tcase = +85°C 145 W
TCASE Operating Case Temperature -20 to +85 °C
Tamb Max. Ambient Temperature +55 °C

DB-960-90W Features

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 90 W min. with 13 dB gain over
   925-960 MHz
• 10:1 LOAD VSWR CAPABILITY
• BeO FREE AMPLIFIER

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