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Easy memory expansion with /CE1, CE2, and /OE features
Automatic power-down when deselected
CMOS for optimum speed/power
Packages offered in a 48-ball FBGA
CY62167DV18 General Description
16M (1024K x 16) Static RAM
CY62167DV18 Maximum Ratings
Storage Temperature .................................65 to +150 Ambient Temperature with Power Applied.............................................55 to +125 Supply Voltage to Ground Potential ......................................... −0.2V to VCCMAX + 0.2V DC Voltage Applied to Outputs in High-Z State[3] ..................................−0.2V to VCC + 0.2V DC Input Voltage[3] .............................. −0.2V to VCC + 0.2V Output Current into Outputs (LOW)............................ 20 mA Static Discharge Voltage.......................................... > 2001V (per MIL-STD-883, Method 3015) Latch-up Current..................................................... > 200 mA
CY62167DV18 Features
Very high speed: 55 ns and 70 ns
Voltage range: 1.65V to 1.95V
Ultra-low active power
Typical active current: 1.5 mA @ f = 1 MHz
Typical active current: 15 mA @ f = fMAX
Ultra-low standby power
Easy memory expansion with /CE1, CE2, and /OE features