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Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of four IGBT Transistors in an H-Bridge configuration, with each transistor having a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
CM50BU-24H Maximum Ratings
Ratings
Symbol
CM50BU-24H
Units
Junction Temperature
Tj
-40 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
1200
Volts
Gate-Emitter Voltage (G-E SHORT)
VCES
±20
Volts
Collector Current (Tc = 25°C)
IC
50
Amperes
Peak Collector Current(Tj 150°C)
ICM
100*
Amperes
Emitter Current** (Tc = 25°C)
IE
50
Amperes
Peak Emitter Current**
IEM
100*
Amperes
Maximum Collector Dissipation (Tc = 25°C)
Pc
400
Watts
Mounting Torque, M4 Main Terminal
-
15
in-lb
Mounting Torque, M5 Mounting
-
31
in-lb
Weight
-
390
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
2500
Volts
CM50BU-24H Features
·Low Drive Power · Low VCE(sat) · Discrete Super-Fast Recovery Free-Wheel Diode · Isolated Baseplate for Easy Heat Sinking
CM50BU-24H Typical Application
·AC Motor Control · Motion/Servo Control · UPS · Welding Power Supplies · Laser Power Supplies