CGY2013AHL/C1, CGY2013G, CGY2014ATW/C1 Selling Leads, Datasheet
MFG:PHI Package Cooled:QFP D/C:99+
CGY2013AHL/C1, CGY2013G, CGY2014ATW/C1 Datasheet download
Part Number: CGY2013AHL/C1
MFG: PHI
Package Cooled: QFP
D/C: 99+
CGY2013AHL/C1, CGY2013G, CGY2014ATW/C1
- Table of contents:
Info of CGY2013AHL/C1
Info of CGY2013G
Info of CGY2014ATW/C1
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About CGY0819
PDF/DataSheet Download
Datasheet: CGY0819
File Size: 311299 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
About CGY2013G
PDF/DataSheet Download
Datasheet: CGY2013G
File Size: 88263 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About CGY0819
PDF/DataSheet Download
Datasheet: CGY0819
File Size: 311299 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
CGY2013G General Description
The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.
The PA requires only a 30 dB harmonic low-pass filter to comply with the GSM transmit spurious specification. can be switched off and its power controlled by monitoring the actual drain voltage applied to the amplifier stages.
The PA requires only a 30 dB harmonic low-pass filter to comply with the GSM transmit spurious specification. can be switched off and its power controlled by monitoring the actual drain voltage applied to the amplifier stages.
CGY2013G Maximum Ratings
| SYMBOL | PARAMETER | MIN. | MAX. | UNIT |
| VDD | positive supply voltage | - | 7 | V |
| VGG | negative supply voltage | - | -10 | V |
| Tj(max) | maximum operating junction temperature | - | 150 | |
| Tstg | IC storage temperature | - | 150 | |
| Ptot | total power dissipation | - | 1.5 | W |
CGY2013G Features
`Power Amplifier (PA) overall efficiency 52%
`35.5 dB gain
`0 dBm input power
`Gain control range >55 dB
`Low output noise floor of PA < -130 dBm/Hz in GSM RX band
`Wide operating temperature range -20 to +85
`LQFP 48 pin package
`Compatible with power ramping controller PCF5077
`Compatible with GSM RF transceiver SA1620.
`35.5 dB gain
`0 dBm input power
`Gain control range >55 dB
`Low output noise floor of PA < -130 dBm/Hz in GSM RX band
`Wide operating temperature range -20 to +85
`LQFP 48 pin package
`Compatible with power ramping controller PCF5077
`Compatible with GSM RF transceiver SA1620.
CGY2013G Typical Application
·880 to 915 MHz hand-held transceivers for E-GSM applications
·900 MHz Time Division Multiple Access (TDMA) systems.
CGY2013G Connection Diagram
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