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CDPO-24436-1, CDQ0303-QS, CDR ADN2812

CDPO-24436-1, CDQ0303-QS, CDR ADN2812 Selling Leads, Datasheet

MFG:QUALLOMM  Package Cooled:MP-144  D/C:00+

CDPO-24436-1, CDQ0303-QS, CDR ADN2812 Picture

CDPO-24436-1, CDQ0303-QS, CDR ADN2812 Datasheet download

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Part Number: CDPO-24436-1

 

MFG: QUALLOMM

Package Cooled: MP-144

D/C: 00+

 

 

 
 
 
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  • CDP1802ACD3

  • Vendor: Intersil Pack: DIP D/C: 01+& Qty: 0 Note: -  Adddate: 2024-06-01
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  • CSQ international ltd   China
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About CDP1020

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Datasheet: CDP1020

File Size: 158108 KB

Manufacturer: INTERSIL [Intersil Corporation]

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About CDQ0303-QS-0G00

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Datasheet: CDQ0303-QS-0G00

File Size: 679038 KB

Manufacturer: MIMIX [Mimix Broadband]

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  • CDR ADN2812

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  • NEW ELITE GROUP   China
    Contact: Mr.arteinchow  
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  • CDR ADN2812

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  • CDR105-220MC

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  • H.K.S.K Electronic Co.,Ltd   China
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About CDR105B-100

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Datasheet: CDR105B-100

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CDQ0303-QS General Description

The CDQ0303-QS is a dual, ultra low-noise amplifier combining high gain, state-of-the-art noise figure and high IP3. Utilizing Mimix's distinctive in-house GaAs fabrication advantage and matched pair technology, co-located matched transistor die are assembled in the 4mm x 4mm QFN package. The low-cost, surface-mount, 16 terminal, plastic package is also lead-free.

Packaging a matched pair of ultra low-noise devices in a single package makes the CDQ0303-QS an ideal product for balanced amplifier implementation. It is intended for many applications operating in the 900 MHz to 2400 MHz frequency range. It can also be used in a dual-band configuration where a single transistor is used for each band.

Mimix's high performance packaged pHEMTs are ideal for use in all applications where low-noise figure, high gain, medium power and good intercept is required. The CDQ0303-QS is the perfect solution for the first or second stage of a base station LNA due to the excellent combination of low-noise figure and linearity. It is also well suited as a medium power driver stage in pole-top amplifiers and other transmit functions, particularly as the low thermal resistance allows extended power dissipation when voltage and current are adjusted for increased power and linearity.

CDQ0303-QS Maximum Ratings

Parameter Rating Parameter Rating Parameter Rating
Drain-Source Voltage 2 +5.5V Drain Current 2 Idss3 A Channel Temperature +175ºC
Gate-Source Voltage 2 -5.0V Total Pwr Dissipation 1.12W Storage Temperature -65ºC to +160ºC
Gate-Drain Voltage 2 -5.0V RF Input Power 17 dBm Thermal Resistance 70ºC/W
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage
2. Assumes DC quiescent conditions. RF OFF.
3. Vgs=0V

CDQ0303-QS Features

 ` Matched Pair of Transistors for Optimum
 ` Balanced Amplifier Design
 ` AlGaAs/InGaAs/AlGaAs Pseudomorphic High
 ` Electron Mobility Transistor (pHEMT)
 ` High Gain:
     -25 dB @ 900 MHz
     -21 dB @ 1900 MHz
 ` Low Noise Figure:
     -0.6 dB @ 900 MHz
     -0.7 dB @ 1900 MHz
     -17 dBm P1dB at 2 GHz
     -33 dBm OIP3 at 2 GHz
 ` 600m Gate Width: 50 Output Impedance
 ` Excellent Uniformity
 ` Ultra Compact Surface-Mount QFN Package
 ` 10 Year MTBF Lifetime
 ` RoHS-Compliant Construction

CDQ0303-QS Typical Application

 · Low Noise Amplifiers and Oscillators Operating over the RF and Microwave Frequency Ranges
 · Cellular/PCS/GSM/W-CDMA
 · Mobile Handsets, Base Station Receivers and Tower-Mount Amplifiers
 · WiMAX WLAN, LEO, GEO, WLL/RLL, GPS and MMDS Applications
 · General Purpose Discrete pHEMT for Other Ultra Low-Noise and Medium Power Applications

CDQ0303-QS Connection Diagram

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