CDPO-24436-1, CDQ0303-QS, CDR ADN2812 Selling Leads, Datasheet
MFG:QUALLOMM Package Cooled:MP-144 D/C:00+
CDPO-24436-1, CDQ0303-QS, CDR ADN2812 Datasheet download
Part Number: CDPO-24436-1
MFG: QUALLOMM
Package Cooled: MP-144
D/C: 00+
MFG:QUALLOMM Package Cooled:MP-144 D/C:00+
CDPO-24436-1, CDQ0303-QS, CDR ADN2812 Datasheet download
MFG: QUALLOMM
Package Cooled: MP-144
D/C: 00+
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PDF/DataSheet Download
Datasheet: CDP1020
File Size: 158108 KB
Manufacturer: INTERSIL [Intersil Corporation]
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PDF/DataSheet Download
Datasheet: CDQ0303-QS-0G00
File Size: 679038 KB
Manufacturer: MIMIX [Mimix Broadband]
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PDF/DataSheet Download
Datasheet: CDR105B-100
File Size: 166902 KB
Manufacturer: ECM [ECM Electronics Limited.]
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The CDQ0303-QS is a dual, ultra low-noise amplifier combining high gain, state-of-the-art noise figure and high IP3. Utilizing Mimix's distinctive in-house GaAs fabrication advantage and matched pair technology, co-located matched transistor die are assembled in the 4mm x 4mm QFN package. The low-cost, surface-mount, 16 terminal, plastic package is also lead-free.
Packaging a matched pair of ultra low-noise devices in a single package makes the CDQ0303-QS an ideal product for balanced amplifier implementation. It is intended for many applications operating in the 900 MHz to 2400 MHz frequency range. It can also be used in a dual-band configuration where a single transistor is used for each band.
Mimix's high performance packaged pHEMTs are ideal for use in all applications where low-noise figure, high gain, medium power and good intercept is required. The CDQ0303-QS is the perfect solution for the first or second stage of a base station LNA due to the excellent combination of low-noise figure and linearity. It is also well suited as a medium power driver stage in pole-top amplifiers and other transmit functions, particularly as the low thermal resistance allows extended power dissipation when voltage and current are adjusted for increased power and linearity.
Parameter | Rating | Parameter | Rating | Parameter | Rating |
Drain-Source Voltage 2 | +5.5V | Drain Current 2 | Idss3 A | Channel Temperature | +175ºC |
Gate-Source Voltage 2 | -5.0V | Total Pwr Dissipation | 1.12W | Storage Temperature | -65ºC to +160ºC |
Gate-Drain Voltage 2 | -5.0V | RF Input Power | 17 dBm | Thermal Resistance | 70ºC/W |