BYV72F-150, BYV72F-200, BYV72FW Selling Leads, Datasheet
MFG:PH Package Cooled:TO- D/C:07+
BYV72F-150, BYV72F-200, BYV72FW Datasheet download
Part Number: BYV72F-150
MFG: PH
Package Cooled: TO-
D/C: 07+
MFG:PH Package Cooled:TO- D/C:07+
BYV72F-150, BYV72F-200, BYV72FW Datasheet download
MFG: PH
Package Cooled: TO-
D/C: 07+
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PDF/DataSheet Download
Datasheet: BYV72F-150
File Size: 41054 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: BYV72F-200
File Size: 41054 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BYV 10- 40
File Size: 74687 KB
Manufacturer: STMicro
Download : Click here to Download
Glass passivated, high efficiency, dual, rectifier diodes in a full pack, plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for useinswitchedmodepowersupplies andhighfrequencycircuitsingeneral where low conduction and switching losses are essential.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VRRM | Peak repetitive reverse Voltage |
150 | V | ||
VRWM | Working peak reverse voltage |
150 | V | ||
VR | continuous reverse voltage | 150 | V | ||
I O(AV) | Average rectified output current (both diodes conducting) |
square wave; = 0.5; Tmb 78 sinusoidal; a = 1.57;T hs 78 |
20 |
A | |
I O(RMS) | RMS output current (both diodes conducting) |
20 |
A | ||
I FRM | repetitive peak forward current | t = 25 s; = 0.5;Ths87 | 30 | A | |
IFSM | non-repetitive peak forward current | t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRMmax) |
150 160 |
A |
I2t | I2t for fusing | t = 10 ms | 112 | A2s | |
Tstg | storage temperature | -65 | +175 | ||
Tj | operating junction temperature | +150 |
Glass passivated, high efficiency, dual, rectifier diodes in a full pack, plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for useinswitchedmodepowersupplies andhighfrequencycircuitsingeneral where low conduction and switching losses are essential.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VRRM | Peak repetitive reverse Voltage |
200 | V | ||
VRWM | Working peak reverse voltage |
200 | V | ||
VR | continuous reverse voltage | 200 | V | ||
I O(AV) | Average rectified output current (both diodes conducting) |
square wave; = 0.5; Tmb 78 sinusoidal; a = 1.57;T hs 78 |
20 |
A | |
I O(RMS) | RMS output current (both diodes conducting) |
20 |
A | ||
I FRM | repetitive peak forward current | t = 25 s; = 0.5;Ths87 | 30 | A | |
IFSM | non-repetitive peak forward current | t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRMmax) |
150 160 |
A |
I2t | I2t for fusing | t = 10 ms | 112 | A2s | |
Tstg | storage temperature | -65 | +175 | ||
Tj | operating junction temperature | +150 |