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BYM26F, BYM26G, BYM300A120DN2

BYM26F, BYM26G, BYM300A120DN2 Selling Leads, Datasheet

MFG:PHILIPS  Package Cooled:SOD-64  D/C:05+

BYM26F, BYM26G, BYM300A120DN2 Picture

BYM26F, BYM26G, BYM300A120DN2 Datasheet download

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Part Number: BYM26F

 

MFG: PHILIPS

Package Cooled: SOD-64

D/C: 05+

 

 

 
 
 
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About BYM26F

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Datasheet: BYM26F

File Size: 71923 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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About BYM26G

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Datasheet: BYM26G

File Size: 71923 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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Datasheet: BYM300A120DN2

File Size: 81711 KB

Manufacturer: Infineon

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BYM26F General Description

Rugged glass SOD64 package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.

BYM26F Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage 200 V
VR crest working reverse voltage 200 V
I F(AV) average forward current Ttp =55 °C; lead length = 10 mm;
see Figs 2; 3 and 4
averaged over any 20 ms period;
see also Figs 14; 15 and 16
2.30 A
I F(AV) average forward current Tamb =65 °C; PCB mounting (see
Fig.25); see Figs 5; 6 and 7
averaged over any 20 ms period;
see also Figs 14; 15 and 16
1.05 A
IFRM repetitive peak forward current Ttp =55 °C; see Figs 8; 9 and 10 19 A
IFRM repetitive peak forward current Tamb =65 °C; see Figs 11; 12 and 13 8.0 A
IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj =Tj max
prior to surge; VR =VRRMmax
45 A
ERSM non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to surge;
inductive load switched off
10 mJ
Tstg storage temperature -65 +175
Tj operating junction temperature see Figs 17 and 18 175

BYM26F Features

* Glass passivated
* High maximum operating temperature
* Low leakage current
* Excellent stability
* Guaranteed avalanche energy absorption capability
* Available in ammo-pack
* Also available with preformed leads for easy insertion.

BYM26F Connection Diagram

BYM26G General Description

Rugged glass SOD64 package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.

BYM26G Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage 200 V
VR crest working reverse voltage 200 V
I F(AV) average forward current Ttp =55 °C; lead length = 10 mm;
see Figs 2; 3 and 4
averaged over any 20 ms period;
see also Figs 14; 15 and 16
2.30 A
I F(AV) average forward current Tamb =65 °C; PCB mounting (see
Fig.25); see Figs 5; 6 and 7
averaged over any 20 ms period;
see also Figs 14; 15 and 16
1.05 A
IFRM repetitive peak forward current Ttp =55 °C; see Figs 8; 9 and 10 19 A
IFRM repetitive peak forward current Tamb =65 °C; see Figs 11; 12 and 13 8.0 A
IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj =Tj max
prior to surge; VR =VRRMmax
45 A
ERSM non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to surge;
inductive load switched off
10 mJ
Tstg storage temperature -65 +175
Tj operating junction temperature see Figs 17 and 18 175

BYM26G Features

* Glass passivated
* High maximum operating temperature
* Low leakage current
* Excellent stability
* Guaranteed avalanche energy absorption capability
* Available in ammo-pack
* Also available with preformed leads for easy insertion.

BYM26G Connection Diagram

BYM300A120DN2 Maximum Ratings

Parameter Symbol Value Unit
Drain source voltage
Tj= 25 °C
VR25 1200 V
DC current
TC = 25 °C
TC = 80 °C
FDC 450
300
A
Pulsed diode current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Fpuls 900
600
i 2t-value, tP = 10 ms
Tj= 0 °C
òi 2t 42000 A2s
Power dissipation per diode
TC = 25 °C
PD 1000 W
Chip temperature TJ + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC 0.125 K/W
Insulation test voltage, t = 1min. Vis 2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

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