BYD73B, BYD73C, BYD73F Selling Leads, Datasheet
MFG:PHILIPS D/C:09+
MFG:PHILIPS D/C:09+
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Datasheet: BYD73B
File Size: 64665 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: BYD73C
File Size: 64665 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: BYD73F
File Size: 64665 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VRRM | repetitive peak reverse voltage | 100 | V | ||
VR | crest working reverse voltage | 100 | V | ||
I F(AV) | average forward current | Ttp =55 °C; lead length = 10 mm; see Figs 2; 3 and 4 averaged over any 20 ms period; see also Figs 14; 15 and 16 |
1.75 | A | |
I F(AV) | average forward current | Tamb =65 °C; PCB mounting (see Fig.25); see Figs 5; 6 and 7 averaged over any 20 ms period; see also Figs 14; 15 and 16 |
1.70 | A | |
IFRM | repetitive peak forward current | Ttp =65 °C; see Fig.6 | 1.00 | A | |
IFRM | repetitive peak forward current | Tamb =60 °C; see Fig.7 | 14 | A | |
IFSM | non-repetitive peak forward current | t = 10 ms half sine wave; Tj =Tj max prior to surge; VR =VRRMmax |
25 | A | |
ERSM | non-repetitive peak reverse avalanche energy |
L = 120 mH; Tj =Tj max prior to surge; inductive load switched off |
10 | mJ |
Tstg | storage temperature | -65 | +175 | ||
Tj | operating junction temperature | see Figs 17 and 18 | -65 | 175 |
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VRRM | repetitive peak reverse voltage | 150 | V | ||
VR | crest working reverse voltage | 150 | V | ||
I F(AV) | average forward current | Ttp =55 °C; lead length = 10 mm; see Figs 2; 3 and 4 averaged over any 20 ms period; see also Figs 14; 15 and 16 |
1.75 | A | |
I F(AV) | average forward current | Tamb =65 °C; PCB mounting (see Fig.25); see Figs 5; 6 and 7 averaged over any 20 ms period; see also Figs 14; 15 and 16 |
1.70 | A | |
IFRM | repetitive peak forward current | Ttp =65 °C; see Fig.6 | 1.00 | A | |
IFRM | repetitive peak forward current | Tamb =60 °C; see Fig.7 | 14 | A | |
IFSM | non-repetitive peak forward current | t = 10 ms half sine wave; Tj =Tj max prior to surge; VR =VRRMmax |
25 | A | |
ERSM | non-repetitive peak reverse avalanche energy |
L = 120 mH; Tj =Tj max prior to surge; inductive load switched off |
10 | mJ |
Tstg | storage temperature | -65 | +175 | ||
Tj | operating junction temperature | see Figs 17 and 18 | -65 | 175 |
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VRRM | repetitive peak reverse voltage | 300 | V | ||
VR | crest working reverse voltage | 300 | V | ||
I F(AV) | average forward current | Ttp =55 °C; lead length = 10 mm; see Figs 2; 3 and 4 averaged over any 20 ms period; see also Figs 14; 15 and 16 |
1.70 | A | |
I F(AV) | average forward current | Tamb =65 °C; PCB mounting (see Fig.25); see Figs 5; 6 and 7 averaged over any 20 ms period; see also Figs 14; 15 and 16 |
0.95 | A | |
IFRM | repetitive peak forward current | Ttp =65 °C; see Fig.6 | 15 | A | |
IFRM | repetitive peak forward current | Tamb =60 °C; see Fig.7 | 9.5 | A | |
IFSM | non-repetitive peak forward current | t = 10 ms half sine wave; Tj =Tj max prior to surge; VR =VRRMmax |
25 | A | |
ERSM | non-repetitive peak reverse avalanche energy |
L = 120 mH; Tj =Tj max prior to surge; inductive load switched off |
10 | mJ |
Tstg | storage temperature | -65 | +175 | ||
Tj | operating junction temperature | see Figs 17 and 18 | -65 | 175 |