BYD33D, BYD33G, BYD33J Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:2006+ D/C:15000
BYD33D, BYD33G, BYD33J Datasheet download
Part Number: BYD33D
MFG: PHILIPS
Package Cooled: 2006+
D/C: 15000
MFG:PHILIPS Package Cooled:2006+ D/C:15000
BYD33D, BYD33G, BYD33J Datasheet download
MFG: PHILIPS
Package Cooled: 2006+
D/C: 15000
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Datasheet: BYD33D
File Size: 67468 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: BYD33G
File Size: 67468 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BYD33J
File Size: 67468 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VRRM | repetitive peak reverse voltage | 200 | V | ||
VR | crest working reverse voltage | 200 | V | ||
I F(AV) | average forward current | Ttp =55 °C; lead length = 10 mm; see Figs 2; 3 and 4 averaged over any 20 ms period; see also Figs 14; 15 and 16 |
1.30 | A | |
I F(AV) | average forward current | Tamb =65 °C; PCB mounting (see Fig.25); see Figs 5; 6 and 7 averaged over any 20 ms period; see also Figs 14; 15 and 16 |
0.70 | A | |
IFRM | repetitive peak forward current | Ttp =65 °C; see Fig.6 | 12 | A | |
IFRM | repetitive peak forward current | Tamb =60 °C; see Fig.7 | 7 | A | |
IFSM | non-repetitive peak forward current | t = 10 ms half sine wave; Tj =Tj max prior to surge; VR =VRRMmax |
90 | A | |
ERSM | non-repetitive peak reverse avalanche energy |
L = 120 mH; Tj =Tj max prior to surge;inductive load switched off | 10 | mJ |
Tstg | storage temperature | -65 | +175 | ||
Tj | operating junction temperature | see Figs 17 and 18 | -65 | 175 |
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VRRM | repetitive peak reverse voltage | 400 | V | ||
VR | crest working reverse voltage | 400 | V | ||
I F(AV) | average forward current | Ttp =55 °C; lead length = 10 mm; see Figs 2; 3 and 4 averaged over any 20 ms period; see also Figs 14; 15 and 16 |
1.30 | A | |
I F(AV) | average forward current | Tamb =65 °C; PCB mounting (see Fig.25); see Figs 5; 6 and 7 averaged over any 20 ms period; see also Figs 14; 15 and 16 |
0.70 | A | |
IFRM | repetitive peak forward current | Ttp =65 °C; see Fig.6 | 12 | A | |
IFRM | repetitive peak forward current | Tamb =60 °C; see Fig.7 | 7 | A | |
IFSM | non-repetitive peak forward current | t = 10 ms half sine wave; Tj =Tj max prior to surge; VR =VRRMmax |
90 | A | |
ERSM | non-repetitive peak reverse avalanche energy |
L = 120 mH; Tj =Tj max prior to surge;inductive load switched off | 10 | mJ |
Tstg | storage temperature | -65 | +175 | ||
Tj | operating junction temperature | see Figs 17 and 18 | -65 | 175 |
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VRRM | repetitive peak reverse voltage | 600 | V | ||
VR | crest working reverse voltage | 600 | V | ||
I F(AV) | average forward current | Ttp =55 °C; lead length = 10 mm; see Figs 2; 3 and 4 averaged over any 20 ms period; see also Figs 14; 15 and 16 |
1.30 | A | |
I F(AV) | average forward current | Tamb =65 °C; PCB mounting (see Fig.25); see Figs 5; 6 and 7 averaged over any 20 ms period; see also Figs 14; 15 and 16 |
0.70 | A | |
IFRM | repetitive peak forward current | Ttp =65 °C; see Fig.6 | 12 | A | |
IFRM | repetitive peak forward current | Tamb =60 °C; see Fig.7 | 7 | A | |
IFSM | non-repetitive peak forward current | t = 10 ms half sine wave; Tj =Tj max prior to surge; VR =VRRMmax |
90 | A | |
ERSM | non-repetitive peak reverse avalanche energy |
L = 120 mH; Tj =Tj max prior to surge;inductive load switched off | 10 | mJ |
Tstg | storage temperature | -65 | +175 | ||
Tj | operating junction temperature | see Figs 17 and 18 | -65 | 175 |