MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:sie D/C:dc98
BUZ72E3044, BUZ72L, BUZ73 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: sie
D/C: dc98
Description: MOSFET N-CH 200V 7A TO-220AB
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PDF/DataSheet Download
Datasheet: BUZ10
File Size: 135632 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUZ72L
File Size: 89788 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUZ73
File Size: 191783 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Parameter | Symbol | Values | Unit |
| Continuous drain current TC =25 |
ID | 10 | A |
| Pulsed drain current TC = 25 |
IDpuls | 40 | |
| Avalanche current,limited by Tjmax | IAR | 10 | |
| Avalanche energy,periodic limited by Tjmax |
EAR |
7.9 |
mJ |
|
Avalanche energy, single pulse |
EAS | 59 | |
| Gate source voltage | VGS | ± 20 | V |
| Power dissipation TC = 25 |
Ptot | 40 | W |
| Operating temperature | Tj | -55 ... + 150 | |
| Storage temperature | Tstg | -55 ... + 150 | |
| Thermal resistance, chip case | RthJC | 3.1 | K/W |
| Thermal resistance, chip to ambient | RthJA | 75 | |
| DIN humidity category, DIN 40 040 | E | ||
| IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |
| Technical/Catalog Information | BUZ73 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 7A |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 4.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 530pF @ 25V |
| Power - Max | 40W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BUZ73 BUZ73 BUZ73IN ND BUZ73INND BUZ73IN |
| Parameter | Symbol | Values | Unit |
| Continuous drain current TC = 28 °C |
ID | 7 |
A |
| Pulsed drain current TC = 25 °C |
IDpuls | 28 | |
| Avalanche energy, single pulse ID = 40 A, VDD = 25 V, RGS = 25 Ω L = 63 µH, Tj= 25 °C |
EAS | 120 |
mJ |
| Avalanche current,limited by Tjmax | IAR | 7 | A |
| Avalanche energy,periodic limited by Tjmax | EAR | 6.5 | mJ |
| Reverse diode dv/dt IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C |
dv/dt | 6 |
kV/µs |
| Gate source voltage | VGS | ± 20 | V |
| Power dissipation TC = 25 °C |
Ptot | 40 |
W |
| Operating temperature | Tj | -55 ... + 150 | °C |
| Storage temperature | Tstg | -55 ... + 150 | |
| Thermal resistance, chip case | RthJC | 3.1 | K/W |
| Thermal resistance, chip to ambient | RthJA | 75 | |
| DIN humidity category, DIN 40 040 | E | ||
| IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |
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