BUZ103S, BUZ103S-4, BUZ103SL Selling Leads, Datasheet
MFG:SIEMENS Package Cooled:TO-263 D/C:97+
BUZ103S, BUZ103S-4, BUZ103SL Datasheet download
Part Number: BUZ103S
MFG: SIEMENS
Package Cooled: TO-263
D/C: 97+
MFG:SIEMENS Package Cooled:TO-263 D/C:97+
BUZ103S, BUZ103S-4, BUZ103SL Datasheet download
MFG: SIEMENS
Package Cooled: TO-263
D/C: 97+
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PDF/DataSheet Download
Datasheet: BUZ103S
File Size: 124432 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUZ103S-4
File Size: 93232 KB
Manufacturer: Infineon
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUZ103SL
File Size: 122699 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
Parameter | Symbol | Values | Unit |
Continuous drain current TC = 25 °C TC = 100 °C |
ID | 31 22 |
A |
Pulsed drain current TC = 25 °C |
IDpuls | 124 | |
Avalanche energy, single pulse ID = 40 A, VDD = 25 V, RGS = 25 Ω L = 63 µH, Tj= 25 °C |
EAS | 140 |
mJ |
Reverse diode dv/dt IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C |
dv/dt | 6 |
kV/µs |
Gate source voltage | VGS | ± 20 | V |
Power dissipation TC = 25 °C |
Ptot | 75 |
W |
Parameter | Symbol | Values | Unit |
Continuous drain current one channel active TA = 25 |
ID |
5.3 |
A |
Pulsed drain current one channel active TA = 25 |
IDpuls |
21.2 | |
Avalanche energy, single pulse ID = 5.3 A, VDD = 25 V, RGS = 25 L =9.97mH, Tj = 25 |
EAS |
140 |
mJ |
Reverse diode dv/dt IS =5.3A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 |
dv/dt |
6 |
kV/s |
Gate source voltage | VGS |
± 20 |
V |
Power dissipation ,one channel active TA = 25 |
Ptot |
2.4 |
W |
Operating temperature | Tj |
-55 ... + 175 |
|
Storage temperature | Tstg |
-55 ... + 175 | |
IEC climatic category, DIN IEC 68-1 |
55 / 175 / 56 |
• Quad-channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
Parameter | Symbol | Values | Unit |
Continuous drain current TC = 25 TC = 100 |
ID | 28 20 |
A |
Pulsed drain current TC = 25 |
IDpuls | 112 | |
Avalanche energy, single pulse ID =28A, VDD = 25 V, RGS = 25 L =357 H, Tj = 25 |
EAS | 140 | mJ |
Avalanche current,limited by Tjmax | IAR | 28 | A |
Avalanche energy,periodic limited by Tjmax | EAR | 7.5 | mJ |
Reverse diode dv/dt IS =28 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 |
dv/dt | 6 | kV/s |
Gate source voltage | VGS | ± 14 | V |
Power dissipation TC = 25 |
Ptot | 75 | W |