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BUZ63, BUZ63(B), BUZ64

Table of contents:
Info of BUZ63
Info of BUZ63(B)
Info of BUZ64

BUZ63, BUZ63(B), BUZ64 Selling Leads, Datasheet

MFG:SIEMENS/INF/ST Package Cooled:PHI,VAL,SML D/C:04+

BUZ63, BUZ63(B), BUZ64 Datasheet download

Five Points

Part Number: BUZ63

MFG: SIEMENS/INF/ST

Package Cooled: PHI,VAL,SML

D/C: 04+

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BUZ64 General Description

BUZ64 is a kind of power transistor. There are some features as follows. First is N channel. Then is enhancement mode. The last one is avalanche-rated.

What comes next is about the absolute maximum ratings. The operating and storage temperature is from -55 to +150. The ID (continuous drain current) is 11.5 A at TC=31. The ID puls (pulse drain current) is 46 A. The IAR (avalanche current limited by Tj max) is 11.5 A. The EAR (avalanche energy, periodic limited by Tj max) is 13 mJ. The EAS (avalanche energy, single pulse) is 670 mJ when ID=11.5 A, VDD=50 V, RGS=25, L=8.87 mH, Tj=25. The VGS (gate-source voltage) is ±20 V. The Ptot (power dissipation) is 125 W at TC=25. The Rth JC (thermal resistance, chip-case) is 1.0 K/W.

The following is about the static characteristics. The minimum V(BR)DSS (drain-source breakdown voltage) is 400 V at VGS=0 V,ID=0.25 mA. The minimum VGS (th) (gate threshold voltage) is 2.1 V, the typical is 3.0 V and the maximum is 4.0 V. The typical IDSS (zero gate voltage drain current) is 0.1A and the maximum is 1.0A at VDS=400 V, VGS=0 V, Tj=25. The typical IDSS (zero gate voltage drain current) is 10A and the maximum is 100A at VDS=400 V, VGS=0 V, Tj=125. The typical IGSS (gate-source leakage current) is 10 nA and the maximum is 100 nA at VGS=20 V, VDS=0 V. The typical RDS(on) (drain-source on-resistance) is 0.35 and the maximum is 0.40 at VGS=10 V, ID=7.5 A.

BUZ64 Maximum Ratings

BUZ64 Features

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