BUZ50B, BUZ50C, BUZ51 Selling Leads, Datasheet
MFG:SIEMENS/INF/ST Package Cooled:PHI,VAL,SML,SIE D/C:04+
BUZ50B, BUZ50C, BUZ51 Datasheet download
Part Number: BUZ50B
MFG: SIEMENS/INF/ST
Package Cooled: PHI,VAL,SML,SIE
D/C: 04+
MFG:SIEMENS/INF/ST Package Cooled:PHI,VAL,SML,SIE D/C:04+
BUZ50B, BUZ50C, BUZ51 Datasheet download
MFG: SIEMENS/INF/ST
Package Cooled: PHI,VAL,SML,SIE
D/C: 04+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: BUZ50B
File Size: 203819 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUZ50C
File Size: 208742 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUZ51
File Size: 181711 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
Parameter | Symbol | Values | Unit |
Drain source voltage | VDS | 1000 | V |
Drain-gate voltage RGS = 20 k |
VDGR | 1000 | |
Continuous drain current TC = 25 |
ID | 2 | A |
Pulsed drain current TC = 25 |
IDpuls | 8 | |
Gate source voltage | VGS | ± 20 | V |
Power dissipation TC = 25 |
Ptot | 78 | W |
Operating temperature | Tj | -55 ... + 150 | |
Storage temperature | Tstg | -55 ... + 150 | |
Thermal resistance, chip case | RthJC | 1.6 | K/W |
Thermal resistance, chip to ambient | RthJC | 75 | |
DIN humidity category, DIN 40 040 | C | ||
IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |
Parameter | Symbol | Values | Unit |
Drain source voltage | VDS | 1000 | V |
Drain-gate voltage RGS = 20 k |
VDGR | 1000 | |
Continuous drain current TC = 25 |
ID | 2.3 | A |
Pulsed drain current TC = 25 |
IDpuls | 9 | |
Gate source voltage | VGS | ± 20 | V |
Power dissipation TC = 25 |
Ptot | 78 | W |
Operating temperature | Tj | -55 ... + 150 | |
Storage temperature | Tstg | -55 ... + 150 | |
Thermal resistance, chip case | RthJC | 1.6 | K/W |
Thermal resistance, chip to ambient | RthJC | 75 | |
DIN humidity category, DIN 40 040 | C | ||
IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |
Parameter | Symbol | Values | Unit |
Continuous drain current TC =29 |
ID | 3.4 | A |
Pulsed drain current TC = 25 |
IDpuls | 13.5 | |
Avalanche current,limited by Tjmax | IAR | 3.4 | |
Avalanche energy,periodic limited by Tjmax |
EAR | 12 | mJ |
Avalanche energy, single pulse |
EAS | 410 | |
Gate source voltage | VGS | ± 20 | V |
Power dissipation TC = 25 |
Ptot | 125 | W |
Operating temperature | Tj | -55 ... + 150 | |
Storage temperature | Tstg | -55 ... + 150 | |
Thermal resistance, chip case | RthJC | 1 | K/W |
Thermal resistance, chip to ambient | RthJA | 75 | |
DIN humidity category, DIN 40 040 | E | ||
IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |