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BUZ385, BUZ40, BUZ40B

Table of contents:
Info of BUZ385
Info of BUZ40
Info of BUZ40B

BUZ385, BUZ40, BUZ40B Selling Leads, Datasheet

MFG:ST/SIE/INF Package Cooled:PHI,VAL,SIE D/C:04+

BUZ385, BUZ40, BUZ40B Datasheet download

Five Points

Part Number: BUZ385

MFG: ST/SIE/INF

Package Cooled: PHI,VAL,SIE

D/C: 04+

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BUZ385 Maximum Ratings

Parameter	Symbol	Values	Unit
Drain source voltage	V_DS	500	V
Drain-gate voltage R_GS = 20 k	V_DGR	500	V
Continuous drain current T_C =25	ID	9	A
Pulsed drain current T_C =25	IDpuls	36	A
Gate-source voltage	V_GS	± 20	V
Power dissipation T_C =25	P_tot	125	W
Operating temperature	T_j	55 ... + 150
Storage temperature	T_stg	55 ... + 150
Thermal resistance, chip-case	R_{th JC}	1	K/W
Thermal resistance, chip to ambient	R_{th JA}	75	K/W
DIN humidity category, DIN 40 040		E
IEC climatic category, DIN IEC 68-1		55/150/56

BUZ385 Features

• N channel
• Enhancement mode
• FREDFET

BUZ40B Maximum Ratings

Parameter	Symbol	Values	Unit
Continuous drain current T_C =25	I_D	8.5	A
Pulsed drain current T_C = 25	I_Dpuls	34
Avalanche current,limited by T_jmax	I_AR	10
Avalanche energy,periodic limited by T_jmax	E_AR	13	mJ
Avalanche energy, single pulse I_D =10A, V_DD = 50 V, R_GS = 25 L =10.3mH, T_j= 25	E_AS	570	mJ
Gate source voltage	V_GS	± 20	V
Power dissipation T_C = 25	P_tot	150	W
Operating temperature	T_j	-55 ... + 150
Storage temperature	T_stg	-55 ... + 150
Thermal resistance, chip case	R_thJC	0.83	K/W
Thermal resistance, chip to ambient	R_thJA	75	K/W
DIN humidity category, DIN 40 040		E
IEC climatic category, DIN IEC 68-1		55 / 150 / 56

BUZ40B Features

• N channel
• Enhancement mode
• Avalanche-rated

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