MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:. D/C:06+
BUZ30A, BUZ30A SMD, BUZ31 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: .
D/C: 06+
Description: MOSFET N-CHAN 200V 14.5A TO220AB
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PDF/DataSheet Download
Datasheet: BUZ30A
File Size: 113742 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUZ10
File Size: 135632 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUZ31
File Size: 90804 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
| Technical/Catalog Information | BUZ30A |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 21A |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 13.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1900pF @ 25V |
| Power - Max | 125W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BUZ30A BUZ30A BUZ30AIN ND BUZ30AINND BUZ30AIN |
| Parameter | Symbol | Values | Unit |
| Continuous drain current TC =26 |
ID | 21 | A |
| Pulsed drain current TC = 25 |
IDpuls | 84 | |
| Avalanche current,limited by Tjmax | IAR | 21 | |
| Avalanche energy,periodic limited by Tjmax |
EAR |
12 |
mJ |
|
Avalanche energy, single pulse |
EAS | 450 | |
| Gate source voltage | VGS | ± 20 | V |
| Power dissipation TC = 25 |
Ptot | 125 | W |
| Operating temperature | Tj | -55 ... + 150 | |
| Storage temperature | Tstg | -55 ... + 150 | |
| Thermal resistance, chip case | RthJC | 1 | K/W |
| Thermal resistance, chip to ambient | RthJA | 75 | |
| DIN humidity category, DIN 40 040 | E | ||
| IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |
| Technical/Catalog Information | BUZ31 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 14.5A |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 9A, 5V |
| Input Capacitance (Ciss) @ Vds | 1120pF @ 25V |
| Power - Max | 95W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BUZ31 BUZ31 BUZ31IN ND BUZ31INND BUZ31IN |
| Parameter | Symbol | Values | Unit |
| Continuous drain current TC =30 |
ID | 14.5 | A |
| Pulsed drain current TC = 25 |
IDpuls | 58 | |
| Avalanche current,limited by Tjmax | IAR | 14.5 | |
| Avalanche energy,periodic limited by Tjmax |
EAR |
9 |
mJ |
|
Avalanche energy, single pulse |
EAS | 200 | |
| Gate source voltage | VGS | ± 20 | V |
| Power dissipation TC = 25 |
Ptot | 95 | W |
| Operating temperature | Tj | -55 ... + 150 | |
| Storage temperature | Tstg | -55 ... + 150 | |
| Thermal resistance, chip case | RthJC | 1.32 | K/W |
| Thermal resistance, chip to ambient | RthJA | 75 | |
| DIN humidity category, DIN 40 040 | E | ||
| IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |
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