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BU208A, BU208D, BU209

Table of contents:
Info of BU208A
Info of BU208D
Info of BU209

BU208A, BU208D, BU209 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products D/C:05+

BU208A, BU208D, BU209 Datasheet download

Five Points

Part Number: BU208A

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled:

D/C: 05+

Description: TRANSISTOR NPN 700V 8A TO-3

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BU208A Parameters

Technical/Catalog Information	BU208A
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	700V
Current - Collector (Ic) (Max)	8A
Power - Max	150W
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Vce Saturation (Max) @ Ib, Ic	1V @ 2A, 4.5A
Frequency - Transition	7MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BU208A BU208A 497 2412 ND 4972412ND 497-2412

BU208A Maximum Ratings

Characteristic	Symbol	BU207	BU208 BU208A	Unit
Collector-Emitter Voltage	V_CEO	600	700	V
Collector-Emitter Voltage	V_CEX	1300	1500	V
Emitter-Base Voltage	V_EBO	5.0		V
Collector Current - Continuous -Peak	I_C	5.0 7.5		A
Base Current -Continuous	I_B	2.5		A
Total Power Dissipation @T_C=25 Derate above 25	P_D	55 0.611		W W/
Operating and Storage Junction Temperature Range	T_J,T_STG	-65 to +115

BU208A Features

*Collector-Emitter Sustaining Voltage.
V_CES = 1300 V (Min.) - BU207
= 1500 V (Min.) - BU208
*Glassivated Base-Collector Junction

BU208D General Description

The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switchingspeeds.

BU208D Maximum Ratings

Symbol	Parameter	Value			Unit
V_CES	Collector-Emitter Voltage (V_BE =0)	1500			V
V_CEO	Collector-Emitter Voltage (I_B = 0)	700			V
V_EBO	Emitter-Base Voltage (I_C =0)	10			V
I_C	Collector Current	8			A
I_CM	Collector Peak Current (t_p <5ms)	15			A
		TO - 3	TO - 218	ISOWATT218
P_tot	Total Dissipation at T_C =25	150	125	50	W
T_stg	Storage Temperature	-65 to 175	-65 to 150	-65 to 150
T_j	Max. Operating Junction Temperature	175	150	150
R_thj-case	Thermal Resistance Junction-case Max	1	1	2.5	/W

BU208D Typical Application

HORIZONTALDEFLECTIONFOR COLOUR TV

BU209 General Description

·High Reverse Voltage
·High Peak Power
·Collector Current- I_C=4A

BU209 Maximum Ratings

SYMBOL	PARAMETER	VALUE	UNIT
V_CES	Collector-Emitter Voltage	1700	V
V_CEO	Collector-Emitter Voltage	800	V
V_EBO	Emitter-Base Voltage	5	V
IC	Collector Current-Continuous	4	A
I_CM	Collector Current-Peak	7.5	A
I_B	Base Current-Continuous	2.5	A
I_BM	Base Current-Peak	4	A
P_C	Collector Power Dissipation @T_C95	12.5	W
T_J	Junction Temperature	115
T_stg	Storage Temperature	-65~115

BU209 Typical Application

·Designed for use in horizontal deflection circuits in color TV receivers.

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