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*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
BSR17A Features
Low current (max. 100 mA)
Low voltage (max. 40 V).
BSR17A Typical Application
BSR17A Datasheet
BSR18A Parameters
Technical/Catalog Information
BSR18A
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Transistor Type
PNP
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
200mA
Power - Max
350mW
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic
250mV @ 1mA, 10mA
Frequency - Transition
250MHz
Current - Collector Cutoff (Max)
-
Mounting Type
Surface Mount
Package / Case
SOT-23
Packaging
Tape & Reel (TR)
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
BSR18A BSR18A
BSR18A General Description
PNP switching transistor
BSR18A Maximum Ratings
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
200
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.