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*1 Degradation is done at 8.0mW/°C for operation above 25°C. *2,3 Degradation is done at 4.5mW/°C for operation above 25°C. *4 Degradation is done at 3.0mW/°C for operation above 25°C.
BR24L32F-W Features
1) 4k registers * 8 bits serial architecture. 2) Single power supply (1.8V to 5.5V). 3) Two wire serial interface. 4) Automatic erase. 5) 32byte Page Write Mode. 6) Low power consumption. Write (5V) : 1.5mA (Typ.) Read (5V) : 0.2mA (Typ.) Standby (5V) : 0.1A (Typ.) 7) DATA security Write protect feature (WP pin). Inhibit to WRITE at low VCC. 8) Small package - - - DIP8 / SOP8 / SSOP-B8 pin 9) High reliability EEPROM with Double-Cell structure. 10) High reliability fine pattern CMOS technology. 11) Endurance : 1,000,000 erase / write cycles 12) Data retention : 40 years 13) Filtered inputs in SCL,SDA for noise suppression. 14) Initial data FFh in all address.
* 32k bit serial EEPROM organized as 4k * 8bit (BR24L32) 64k bit serial EEPROM organized as 8k * 8bit (BR24L64) * 2 wire bus serial interface (2 byte Address) * Low operating voltage range (2V operating) Read : 1.8~5.5V Write : 1.8~5.5V * Low current consumption Active : 3mA MAX Standby : 2A MAX * Clock frequency : 100kHz MAX (1.8~5.5V) 400kHz MAX (2.5~5.5V) * Write cycle time : 5ms MAX * Address auto-increment function during read operation * Automatic erase-before-write function during write operation * Page write function : 32byte * Inadvertent write protection function Inadvertent write protection at low voltage (Vcc Lock-out function) WP (Write Protect) function * Schmitt trigger circuit and noise filter are built into SCL and SDA pins * 1,000,000 write cycle typical * 40 years data retention * Operating temperature range : -40~85