Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDITSM1ITSM2 I2tdIT /dtPtotPTMTstgTaTvj Continuous voltageNon repetitive peak currentNon repetitive on-state current I2 t for fusingRate of rise of on-state currentafter V(BO) turn-onContinuous dissipationPeak dissipationSto...
BR211: Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDITSM1ITSM2 I2tdIT /dtPtotPTMTstgTaTvj Continuous voltageNon repetitive peak currentNon repetitive on-state current I2 t fo...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VD ITSM1 ITSM2 I2t dIT /dt Ptot PTM Tstg Ta Tvj |
Continuous voltage |
10/320 s impulse equivalent to 10/700 s, 1.6 kV voltage impulse (CCITT K17) half sine wave; t = 10 ms; Tj = 70 ?C prior to surge tp = 10 ms tp = 10 s Ta = 25 tp = 1 ms; Ta = 25 off-state on-state |
- - - - - - - -65 - - |
75% of V(BO)typ 40 15 1.1 50 1.2 50 150 70 150 |
V A A A2 s A/s W W |
A range of bidirectional, breakover diodes in an axial, hermetically sealed, glass envelope. BR211 feature controlled breakover voltage and high holding current together with high peak current handling capability. Typical applications of BR211 include transient overvoltage protection in telecommunications equipment.