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BR24L32, BR24L32F, BR24L32FV-W

Table of contents:
Info of BR24L32
Info of BR24L32F
Info of BR24L32FV-W

BR24L32, BR24L32F, BR24L32FV-W Selling Leads, Datasheet

MFG:ROHM Package Cooled:02+ D/C:166

BR24L32, BR24L32F, BR24L32FV-W Datasheet download

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Part Number: BR24L32

MFG: ROHM

Package Cooled: 02+

D/C: 166

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BR24L32 General Description

[ Product description ]

?ROHM's high reliability serial EEPROMs command a large market share and are available in a range of capacities, bus interfaces (Microwire, I2C, SPI), operating voltages (1.8V to 5.5V, 2.5V to 5.5V) and package types, making them ideal for battery powered devices. In addition, the entire series utilizes unique double cell construction, significantly improving reliability, and are both lead-free and RoHS-compliant.

BR24L32 Maximum Ratings

I/F I²C BUS Capacity (K) 32 Bit Format 4096×8 Supply Voltage (V) 1.7 to 5.5 Current consumption Operating(mA) 3 Standby(µA) 2 Max.Write Cycle Time (ms) 5 Operating Temperature Range (ºC) -40 to +85 Number of Rewrite (Times) 10⁶ Data Retention (Years) 40

BR24L32 Connection Diagram

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BR24L32FV-W Maximum Ratings

Parameter	Symbol	Limits	Unit
Supply voltage	V_CC	-0.3 to +6.5	V
Power dissipation	P_d	800(DIP8) *1	mW
		450(SOP8) *2
		450(SOP-J8) *2
		300(SSOP-B8) *3
		310(MSOP8) *4
Storage temperature	T_stg	-65 to +125	°C
Operating temperature	T_opr	-40 to +85	°C
Terminal voltage	-	-0.3 to V_CC+0.3	V

*1 Degradation is done at 8.0mW/°C for operation above 25°C.
*2,3 Degradation is done at 4.5mW/°C for operation above 25°C.
*4 Degradation is done at 3.0mW/°C for operation above 25°C.

BR24L32FV-W Features

1) 4k registers * 8 bits serial architecture.
2) Single power supply (1.8V to 5.5V).
3) Two wire serial interface.
4) Automatic erase.
5) 32byte Page Write Mode.
6) Low power consumption.
     Write     (5V) : 1.5mA (Typ.)
     Read   (5V) : 0.2mA (Typ.)
     Standby (5V) : 0.1A (Typ.)
7) DATA security
     Write protect feature (WP pin).
     Inhibit to WRITE at low VCC.
8) Small package - - - DIP8 / SOP8 / SSOP-B8 pin
9) High reliability EEPROM with Double-Cell structure.
10) High reliability fine pattern CMOS technology.
11) Endurance : 1,000,000 erase / write cycles
12) Data retention : 40 years
13) Filtered inputs in SCL,SDA for noise suppression.
14) Initial data FFh in all address.

BR24L32FV-W Typical Application

General purpose

BR24L32FV-W Connection Diagram

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