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*1 Reduced by 8.0mW for each increase in Ta of 1°C over 25°C. *2 Reduced by 4.5mW for each increase in Ta of 1°C over 25°C. *3 Reduced by 3.0mW for each increase in Ta of 1°C over 25°C. *4 Reduced by 3.1mW for each increase in Ta of 1°C over 25°C.
BR24L08FV-W Features
1) 1024 registers * 8 bits serial architecture. 2) Single power supply (1.8V to 5.5V). 3) Two wire serial interface. 4) Self-timed write cycle with automatic erase. 5) 16byte Page Write mode. 6) Low power consumption. Write (5V) : 1.5mA (Typ.) Read (5V) : 0.2mA (Typ.) Standby (5V) : 0.1A (Typ.) 7) DATA security Write protect feature (WP pin). Inhibit to WRITE at low VCC. 8) Small package - - - DIP8 / SOP8 / SOP-J8 / SSOP-B8 / MSOP-8 9) High reliability EEPROM with Double-Cell structure. 10) High reliability fine pattern CMOS technology. 11) Endurance : 1,000,000 erase / write cycles 12) Data retention : 40 years 13) Filtered inputs in SCL*SDA for noise suppression. 14) Initial data FFh in all address.