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BR24L01AFVMWTR, BR24L01AF-W, BR24L01AF-WE2193

Table of contents:
Info of BR24L01AFVMWTR
Info of BR24L01AF-W
Info of BR24L01AF-WE2193

BR24L01AFVMWTR, BR24L01AF-W, BR24L01AF-WE2193 Selling Leads, Datasheet

MFG:rohm Package Cooled:rohm D/C:dc04

BR24L01AFVMWTR, BR24L01AF-W, BR24L01AF-WE2193 Picture

BR24L01AFVMWTR, BR24L01AF-W, BR24L01AF-WE2193 Datasheet download

Five Points

Part Number: BR24L01AFVMWTR

MFG: rohm

Package Cooled: rohm

D/C: dc04

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BR24L01AF-W Maximum Ratings

Parameter	Symbol	Limits	Unit
Supply voltage	V_CC	-0.3 to +6.5	V
Power dissipation	P_d	800(DIP8) *1	mW
		450(SOP8) *2
		450(SOP-J8) *2
		300(SSOP-B8) *3
		310(MSOP8) *4
Storage temperature	T_stg	-65 to +125	°C
Operating temperature	T	-40 to +85	°C
Terminal voltage	-	-0.3 to V_CC+0.3	V

*1      Degradation is done at 8.0mW/°C for operation above 25°C.
*2, 3 Degradation is done at 4.5mW/°C for operation above 25°C.
*4      Degradation is done at 3.0mW/°C for operation above 25°C.
*5      Degradation is done at 3.1mW/°C for operation above 25°C.

BR24L01AF-W Features

1) 128 registers * 8 bits serial architecture.
2) Single power supply (1.8V to 5.5V).
3) Two wire serial interface.
4) Self-timed write cycle with automatic erase.
5) 8 byte page write mode.
6) Low power consumption.
       Write     (5V) : 1.2mA (Typ.)
       Read   (5V) : 0.2mA (Typ.)
       Standby (5V) : 0.1A (Typ.)
7) DATA security
       Write protect feature (WP pin) .
       Inhibit to WRITE at low VCC.
8) Small package - - - DIP8 / SOP8 / SOP-J8 / SSOP-B8 / MSOP-8
9) High reliability EEPROM with Double-Cell Structure
10) High reliability fine pattern CMOS technology.
11) Endurance : 1,000,000 erase / write cycles
12) Data retention : 40 years
13) Filtered inputs in SCL*SDA for noise suppression.
14) Initial data FFh in all address.

BR24L01AF-W Typical Application

General purpose

BR24L01AF-W Connection Diagram

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