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BGA427, BGA427E6327, BGA428

Table of contents:
Info of BGA427
Info of BGA427E6327
Info of BGA428

BGA427, BGA427E6327, BGA428 Selling Leads, Datasheet

MFG:Infindeon Package Cooled:Sot-343 D/C:09+

BGA427, BGA427E6327, BGA428 Datasheet download

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Part Number: BGA427

MFG: Infindeon

Package Cooled: Sot-343

D/C: 09+

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BGA427 Maximum Ratings

Parameter	Symbol	Value	Unit
Device current	I_D	25	mA
Device voltage	V_D,+V	6	V
Total power dissipation, T_S 120 °C	P_tot	150	mW
RF input power	P_RFin	-10	dBm
Junction temperature	T_j	150
Ambient temperature	T_A	-65 ...150
Storage temperature	T_stg	-65 ...150
Thermal Resistance
Junction - soldering point ¹⁾	R_thJS	295	K/W

1For calculation of R_thJA please refer to Application Note Thermal Resistance

BGA427 Features

` Cascadable 50 -gain block
` Unconditionally stable
` Gain |S₂₁|² = 18.5 dB at 1.8 GHz (Appl.1)
   gain |S₂₁|² = 22 dB at 1.8 GHz (Appl.2)
   IP_3out = +7 dBm at 1.8 GHz (V_D=3V, I_D=9.4mA)
` Noise figure N_F = 2.2 dB at 1.8 GHz
` Typical device voltage VD = 2 V to 5 V
` Reverse isolation  > 35 dB (Appl.2)

BGA428 Maximum Ratings

Parameter	Symbol	Value	Unit
Device voltage	V_CC	4	V
Total Device Current 3)	I_tot	12	mA
Voltage at pin Out	V_Out	4	V
Current into pin In	I_IN	0.5	mA
Voltage at pin GS	V_GS	3.5	V
Total power dissipation, T_s < 125°C¹⁾	P_tot	50	mW
Junction temperature	T_j	150
Operating temperature range	T_OP	-40 ..+85
Storage temperature range	T_STG	-65 ... +150
Thermal resistance: junction-soldering point	R_{th JS}	220	K/W
Input power ²⁾	P_IN	8	dBm

Notes:
All Voltages refer to GND-Node
1) Ts is measured on the ground lead at the soldering point
2) Valid for a) ZL=50Ω and Z_S=50Ω, V_CC=2.7V, V_OUT=2.7V, V_GS=0.0V, GND=0.0V
and b) Z_L=50Ω and Z_S=50Ω, V_CC=0.0V, V_OUT=0.0V, V_GS=2.7V, GND=0.0V
3)I_tot= Current into OUT + Current into V_CC

BGA428 Features

• High gain, GMA=20dB at 1.8GHz
• Low noise figure, N_F=1.4dB at 1.8GHz
•Prematched
• Ideal for GSM, DCS1800, PCS1900
• Open collector output
• Typical supply voltage: 2.4-3V
•SIEGET®-45 technology

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