Features: • Low current, low voltage• Very high power gain• Low noise figure• Integrated temperature compensated biasing• Supply and RF output pin combined.Application• RF front end• Wideband applications, e.g. analog and digital cellulartelephones, cordle...
BGA2001: Features: • Low current, low voltage• Very high power gain• Low noise figure• Integrated temperature compensated biasing• Supply and RF output pin combined.Application&...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VS | supply voltage | RF input AC coupled | − | 4.5 | V |
IS | supply current (DC) | forced by DC voltage on RF input | − | 30 | mA |
Ptot | total power dissipation | Ts 100 °C | − | 135 | mW |
Tstg | storage temperature | −65 | +150 | ||
Tj | operating junction temperature | − | 150 |
Silicon MMIC amplifier BGA2001 consisting of an NPN doublepolysilicon transistor with integrated biasing for low voltage pplications in a plastic, 4-pin dual-emitter SOT343R ackage.