BFR93/R1, BFR93/R10, BFR93A Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:SOT23 D/C:2008
BFR93/R1, BFR93/R10, BFR93A Datasheet download
Part Number: BFR93/R1
MFG: PHILIPS
Package Cooled: SOT23
D/C: 2008
MFG:PHILIPS Package Cooled:SOT23 D/C:2008
BFR93/R1, BFR93/R10, BFR93A Datasheet download
MFG: PHILIPS
Package Cooled: SOT23
D/C: 2008
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PDF/DataSheet Download
Datasheet: BFR1
File Size: 34276 KB
Manufacturer: CENTRAL [Central Semiconductor Corp]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BFR1
File Size: 34276 KB
Manufacturer: CENTRAL [Central Semiconductor Corp]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BFR93A
File Size: 82482 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
The BFR93A is designed as one kind of NPN wideband silicon germanium RF transistor,and the NPN silicon germanium microwave transistor for low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA.
The absolute maximum ratings of the BFR93A can be summarized as:(1)collector-emitter voltage:12 V;(2)collector-emitter voltage:20 V;(3)collector-base voltage:20V;(4)emitter-base voltage:2V;(5)collector current:50 mA;(6)Base current:6 mA;(7)total power dissipation:300 mW;(8)junction temperature:150°C;(9)ambient temperature:-65 to 150°C;(10)storage temperature:-65 to 150°C.If you want to know more information such as the electrical characteristics about the BFR93A,please download the datasheet in www.seekdatasheet.com .
Parameter |
Symbol |
Values |
Unit |
Collector-emitter voltage |
VCEO |
12 |
v
|
Collector-emitter voltage |
VCES |
20 | |
Collector-base voltage |
VCBO |
20 | |
Emitter-base voltage |
VEBO |
2 | |
collector current |
IC |
50 |
mA |
Base current |
IB |
6 | |
Total power dissipation, TS= 71 °C |
Ptot |
300 |
mW |
Junction temperature |
TJ |
150 |
°C |
Ambient temperature |
TA |
- 65 ... + 150 | |
Storage Temperature |
TSTG |
-65 ...+150 |