Features: • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA• Complementary type: BFR 106 (NPN)Specifications Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 V...
BFR 194: Features: • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA• Complementary type: BFR 106 (NPN)Spec...
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Transistors RF Silicon Germanium NPN Silicon RF TRANSISTOR
• For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA
• Complementary type: BFR 106 (NPN)
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCEO |
15 |
V |
Collector-base voltage |
VCBO |
20 | |
Emitter-base voltage |
VEBO |
3 | |
Collector current |
IC |
100 |
mA |
Base current |
IB |
10 | |
Total power dissipationTS 73°C |
Ptot |
700 |
mW |
Junction temperature |
Tj |
150 |
°C |
Ambient temperature |
TA |
65 . 150 | |
Storage temperature |
Tstg |
65 . 150 | |
Thermal Resistance | |||
Junction - soldering point1) |
RthJS |
110 |
K/W |
1) TS is measured on the collector lead at the soldering point to the pcb.