BFR540, BFR540(N29), BFR540/33W Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:SOT-23 D/C:05+
BFR540, BFR540(N29), BFR540/33W Datasheet download
Part Number: BFR540
MFG: PHILIPS
Package Cooled: SOT-23
D/C: 05+
BFR540, BFR540(N29), BFR540/33W
- Table of contents:
Info of BFR540
Info of BFR540(N29)
Info of BFR540/33W
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About BFR540
PDF/DataSheet Download
Datasheet: BFR540
File Size: 104325 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BFR1
PDF/DataSheet Download
Datasheet: BFR1
File Size: 34276 KB
Manufacturer: CENTRAL [Central Semiconductor Corp]
Download : Click here to Download
About BFR1
PDF/DataSheet Download
Datasheet: BFR1
File Size: 34276 KB
Manufacturer: CENTRAL [Central Semiconductor Corp]
Download : Click here to Download
BFR540 General Description
The BFR540 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.),radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.
The transistor is encapsulated in a plastic SOT23 envelope.
BFR540 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | − | 20 | V |
| VCEO | collector-emitter voltage | RBE =0 | − | 15 | V |
| VEBO | emitter-base voltage | open collector | − | 2.5 | V |
| IC | collector current (DC) | − | 120 | mA | |
| Ptot | total power dissipation | up to Ts =70 °C; note 1 | − | 500 | mW |
| Tstg | storage temperature | −65 | 150 | ||
| Tj | junction temperature | − | 175 |
BFR540 Features
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
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