BFR520T, BFR521, BFR53 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:SOT-523 D/C:2001
BFR520T, BFR521, BFR53 Datasheet download
Part Number: BFR520T
MFG: PHILIPS
Package Cooled: SOT-523
D/C: 2001
BFR520T, BFR521, BFR53
- Table of contents:
Info of BFR520T
Info of BFR521
Info of BFR53
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About BFR520T
PDF/DataSheet Download
Datasheet: BFR520T
File Size: 151361 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BFR1
PDF/DataSheet Download
Datasheet: BFR1
File Size: 34276 KB
Manufacturer: CENTRAL [Central Semiconductor Corp]
Download : Click here to Download
About BFR53
PDF/DataSheet Download
Datasheet: BFR53
File Size: 92101 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BFR520T General Description
NPN transistor in a plastic SOT416 (SC75) envelope.It is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz.
BFR520T Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | − | 20 | V |
| VCEO | collector-emitter voltage | RBE =0 | − | 15 | V |
| VEBO | emitter-base voltage | open collector | − | 2.5 | V |
| IC | collector current (DC) | − | 70 | mA | |
| Ptot | total power dissipation | up to Ts = 118 °C; note 1 | − | 300 | mW |
| Tstg | storage temperature | −65 | 150 | ||
| Tj | junction temperature | − | 175 |
1. Ts is the temperature at the soldering point of the collector tab.
BFR520T Features
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability
• SOT416 (SC75) envelope.
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability
• SOT416 (SC75) envelope.
BFR53 General Description
NPN wideband transistor in a plastic SOT23 package.
BFR53 Maximum Ratings
| SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCBO | collector-base voltage |
open emitter |
- |
18 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
10 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
2.5 |
V |
| IC | collector current (DC) |
- |
50 |
mA | |
| ICM | peak collector current |
f > 1 MHz |
- |
100 |
mA |
| Ptot | total power dissipation |
Ts 85 °C (note 1) |
- |
250 |
W |
| Tstg | storage temperature |
-65 |
+150 |
°C | |
| Tj | junction temperature |
- |
150 |
°C |
Note
1. Ts is the temperature at the soldering point of the collector pin.
BFR53 Features
· Very low intermodulation distortion
· Very high power gain.
· Very high power gain.
BFR53 Typical Application
· Thick and thin-film circuits.
BFR53 Connection Diagram
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