BF1204, BF1205, BF1205C Selling Leads, Datasheet
MFG:PHI Package Cooled:SOT363 D/C:08.09+
BF1204, BF1205, BF1205C Datasheet download
Part Number: BF1204
MFG: PHI
Package Cooled: SOT363
D/C: 08.09+
MFG:PHI Package Cooled:SOT363 D/C:08.09+
BF1204, BF1205, BF1205C Datasheet download
MFG: PHI
Package Cooled: SOT363
D/C: 08.09+
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PDF/DataSheet Download
Datasheet: BF1204
File Size: 113110 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: BF1205
File Size: 189517 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: BF1205C
File Size: 175580 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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The BF1204 is one member of the N-channel dual gate MOS-FETs family,it is produced by the Philips Semiconductors with some features such as:(1)two low noise gain controlled amplifiers in a single package;(2)superior cross-modulation performance during AGC;(3)high forward transfer admittance;(4)high forward transfer admittance to input capacitance ratio.It can be used in the gain controlled low noise amplifiers for VHF and UHF applications with 3 to 9 V supply voltage,such as digital and analog television tuners and professional communications equipment.And the BF1204 is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads.The source and substrate are interconnected.Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC.Integrated diodes between the gates and source protect against excessive input voltage surges.The transistor has a SOT363 micro-miniature plastic package.
The absolute maximum ratings of the BF1204 can be summarized as:(1)drain-source voltage:10 V;(2)drain current:30 mA;(3)total power dissipation:200 mW;(4)operating junction temperature:150 °C;(5)forward transfer admittance:25 to 40 mS;(6)input capacitance at gate 1:1.7 pF;(7)reverse transfer capacitance(f=1 MHz):15 pF;(8)noise figure(f=800 MHz):1.1 dB;(9)storage temperature:-65 to +150 °C;(10)operating junction temperature:150 °C.
You need to know that these products are not designed for use in life support appliances, devices,or systems where malfunction of these products can reasonably be expected to result in personal injury.If you want to know more information such as the electrical AC characteristics about the BF1204,please download the datasheet in www.seekdatasheet.com .
The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b.
The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package.
SYMBOL | PARAMETER | CONDITIONS | MIN. |
MAX. |
UNIT |
Per MOS-FET; unless otherwise specified | |||||
VDS | drain-source voltage | - |
6 |
V | |
ID | drain current (DC) | - |
30 |
mA | |
IG1 | gate 1 current | - |
±10 |
mA | |
IG2 | gate 2 current | - |
±10 |
mA | |
Ptot | total power dissipation | Ts107; note 1 | - |
180 |
mW |
Tstg | storage temperature | -65 |
+150 |
||
Tj | junction temperature | - |
150 |