Features: • Two low noise gain controlled amplifiers in a single package• Specially designed for 5 V applications• Superior cross-modulation performance during AGC• High forward transfer admittance• High forward transfer admittance to input capacitance ratio.Applicati...
BF1102R: Features: • Two low noise gain controlled amplifiers in a single package• Specially designed for 5 V applications• Superior cross-modulation performance during AGC• High forw...
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Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professional communications equipment.
SYMBOL | PARAMETER | CONDITIONS | MIN. | TYP. | MAX. | UNIT |
Per MOS-FET unless otherwise specified | ||||||
VDS | drain-source voltage | − | − | 7 | V | |
ID | drain current (DC) | − | − | 40 | mA | |
Ptot | total power dissipation | Ts 102 °C; note 1 | − | − | 200 | mW |
|yfs| | forward transfer admittance | ID =15mA | 36 | 43 | − | mS |
Cig1-s | input capacitance at gate 1 | ID =15mA | − | 2.8 | 3.6 | pF |
Crss | reverse transfer capacitance | f = 1 MHz | − | 30 | 50 | fF |
F | noise figure | f = 800 MHz | − | 2 | 2.8 | dB |
Xmod | cross-modulation | input level for k = 1% at 40 dB AGC | 100 | − | − | dBµV |
Tj | operating junction temperature | − | − | 150 | °C |
The BF1102 and BF1102R are both two equal dual gate MOS-FETs which have a shared source pin and a shared gate 2 pin. Both devices have interconnected source and substrate; an internal bias circuit enables DC stabilization and a very good cross-modulation performance at 5 V supply voltage; integrated diodes between the gates and source protect against excessive input voltage surges. Both devices have a SOT363 micro-miniature plastic package.