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The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec TO-220 plastic package. They are intented for usein powerlinearand switchingapplications.
The BD707 and BD711 complementary PNP typesareBD708and BD712respectively.
BD711 Maximum Ratings
Symbol
Parameter
Value
Unit
BD707
BD709
BD711
BD708
BD712
VCBO
Collector-Base Voltage (IE =0)
60
80
100
V
VCER
Collector-Emitter Voltage (VBE =0)
60
80
100
V
VCEO
Collector-Emitter Voltage (IB =0)
60
80
100
V
VEBO
Emitter-Base Voltage (IC =0)
5
V
IC
Collector Current
12
A
ICM
Collector Peak Current
18
A
IB
Base Current
5
A
Ptot
Total Dissipation at Tc 25
75
W
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150
BD711 Typical Application
*LINEARAND SWITCHING INDUSTRIAL *EQUIPMENT
BD712 General Description
The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec TO-220 plastic package. They are intented for usein powerlinearand switchingapplications.
The BD707 and BD711 complementary PNP typesareBD708and BD712respectively.