BC80716, BC807-16, BC807-16 PB-FREE Selling Leads, Datasheet
MFG:itt Package Cooled:itt D/C:dc90
BC80716, BC807-16, BC807-16 PB-FREE Datasheet download
Part Number: BC80716
MFG: itt
Package Cooled: itt
D/C: dc90
MFG:itt Package Cooled:itt D/C:dc90
BC80716, BC807-16, BC807-16 PB-FREE Datasheet download
MFG: itt
Package Cooled: itt
D/C: dc90
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Datasheet: BC80716
File Size: 74249 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: BC807-16
File Size: 48581 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BC807
File Size: 212599 KB
Manufacturer: KEC [KEC(Korea Electronics)]
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BC807-16 is a type of NPN general purpose transistor which has two unique features: (1) high current which is max.500 mA; (2) low voltage which is max.45 V.
There are some maximum ratings about it.(1): collector-emitter voltage(VCEO) is 45 Vdc(open base and Ic is 10 mA); (2): collector-base voltage(VCBO)is -50 Vdc(open emitter); (3): emitter-base voltage(VEBO) is -5.0 Vdc(open collector); (4): collector current-DC(Ic) is -500 mAdc; (5): total power dissipation(Ptot) is 250 mW when Tamb is not higher than 25; (6): junction temperature(Tj) is 150; (7): storage temperature(Tstg) is -65 to 150.
Besides,there are still some electrical characteristics about it when Ta is 25 unless otherwise noted.Off characteristics: (1): collector cutoff current(ICBO) is -100 nA max when VCB is -20 V and IE is 0; (2): emitter cut-off gain(IEBO) is -100 nA max when Ic is 0 and VEB is -5 V; (3): DC current gain(hFE) is 100 min and 250 max when VCE is -1 V and Ic is -100 mA;(4): collector emitter saturation voltage(VCE(sat)) is -700 mV max when Ic is -500 mA and IB is -50 mA; (5): base emitter voltage(VBE) is -1200 mV max when Ic is -500 mA and VCE is -1 V; (6): transition frequency(fT) is 80 MHz min when Ic is -10 mA, VCE is -5 V and f is 100 MHz.
PARAMETER | SYMBOL | VALUE | UNIT |
Collector-Emitter Voltage | VCEO | -45 | V |
Emitter-Base Voltage | VEBO | -5.0 | V |
Collector Current | IC | -500 | mA |
Peak Collector Current | ICM | -1000 | mA |
Peak Base Current | IEM | -1000 | mA |
Power Dissipation atT = 50°C (Note 1) | Pd | 310 | mW |
Thermal Resistance, Junction to Substrate Backside (Note 1) | RJSB | 320 | °C/W |
Thermal Resistance, Junction to Ambient Air (Note 1) | RJA | 403 | °C/W |
Operating and Storage Temperature Range | Tj :Tstg | -65 to +150 |
Ideally Suited for Automatic Insertion.
EpitaxialPlanar Die Construction.
For Switching, AF Driver and Amplifier Applications.
Complementary NPN Types Available (BC817).