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BC80716, BC807-16, BC807-16 PB-FREE

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MFG:itt  Package Cooled:itt  D/C:dc90

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Part Number: BC80716

 

MFG: itt

Package Cooled: itt

D/C: dc90

 

 

 
 
 
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About BC80716

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Datasheet: BC80716

File Size: 74249 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About BC807-16

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Datasheet: BC807-16

File Size: 48581 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • BC806-16

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  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
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    Fax: 0086-755-61174144
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  • BC807

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  • Walsoon Group Ltd   China
    Contact: Mr.StevenLee   MSN:steven200867@hotmail.com
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    Fax: 86-755-82818852
    (17)
  • BC807

  • Vendor: Changjiang Pack: SOT D/C: 07+&   Adddate: 2024-11-24
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  • TEAM SOURCE (HK) LIMITED   China
    Contact: Ms.edithchen   MSN:EDITH_CHEN@126.COM
    Tel: 86-755-33060402 33062656
    Fax: 86-755-33062657
    (0)
  • BC807

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  • ZHONGXINIC Electronics   China
    Contact: Mr.Zhang  
    Tel: 086-755-82736756
    Fax: 086-755-82736756
    (7)
  • BC807

  • D/C: 10+& Qty: 4800000  Adddate: 2024-11-24
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  • SHUNANDADZ   China
    Contact: Ms.S   MSN:mmazc2010@hotmail.com
    Tel: 86-755-61329665
    Fax: 86-755-61329665
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About BC807

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Datasheet: BC807

File Size: 212599 KB

Manufacturer: KEC [KEC(Korea Electronics)]

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BC807-16 General Description

BC807-16 is a type of NPN general purpose transistor which has two unique features: (1) high current which is max.500 mA; (2) low voltage which is max.45 V.

There are some maximum ratings about it.(1): collector-emitter voltage(VCEO) is 45 Vdc(open base and Ic is 10 mA); (2): collector-base voltage(VCBO)is -50 Vdc(open emitter); (3): emitter-base voltage(VEBO) is -5.0 Vdc(open collector); (4): collector current-DC(Ic) is -500 mAdc; (5): total power dissipation(Ptot) is 250 mW when Tamb is not higher than 25; (6): junction temperature(Tj) is 150; (7): storage temperature(Tstg) is -65 to 150.

Besides,there are still some electrical characteristics about it when Ta is 25 unless otherwise noted.Off characteristics: (1): collector cutoff current(ICBO) is -100 nA max when VCB is -20 V and IE is 0; (2): emitter cut-off gain(IEBO) is -100 nA max when Ic is 0 and VEB is -5 V; (3): DC current gain(hFE) is 100 min and 250 max when VCE is -1 V and Ic is -100 mA;(4): collector emitter saturation voltage(VCE(sat)) is -700 mV max when Ic is -500 mA and IB is -50 mA; (5): base emitter voltage(VBE) is -1200 mV max when Ic is -500 mA and VCE is -1 V; (6): transition frequency(fT) is 80 MHz min when Ic is -10 mA, VCE is -5 V and f is 100 MHz.

BC807-16 Maximum Ratings

PARAMETER SYMBOL VALUE UNIT
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current IC -500 mA
Peak Collector Current ICM -1000 mA
Peak Base Current IEM -1000 mA
 Power Dissipation atT = 50°C  (Note 1)  Pd  310  mW
 Thermal Resistance, Junction to Substrate Backside (Note 1)  RJSB  320  °C/W
Thermal Resistance, Junction to Ambient Air (Note 1) RJA 403  °C/W
Operating and Storage Temperature Range Tj :Tstg -65 to +150  

BC807-16 Features

Ideally Suited for Automatic Insertion.
EpitaxialPlanar Die Construction.
For Switching, AF Driver and Amplifier Applications.
Complementary NPN Types Available (BC817).

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