MFG:Diodes Inc (VA) Category:Discrete Semiconductor Products Package Cooled:06+ D/C:30000
BAS40-05T, BAS40-05T-7-F, BAS40-05V Datasheet download
Category: Discrete Semiconductor Products
MFG: Diodes Inc (VA)
Package Cooled: 06+
D/C: 30000
Description: DIODE SCHOTTKY 40V 150MW SOT-523
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PDF/DataSheet Download
Datasheet: BAS40-05T
File Size: 372736 KB
Manufacturer: DIODES
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BAS 125W
File Size: 99356 KB
Manufacturer: Siemens Semiconductor Group
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BAS40-05V
File Size: 55895 KB
Manufacturer: Philips
Download : Click here to Download
| Characteristic |
Symbol |
Value |
Unit |
| Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM VRWM VR |
40 |
V |
| RMS Reverse Voltage |
VR(RMS) |
28 |
V |
| Forward Continuous Current (Note 1) |
IFM |
200 |
mA |
| Non-Repetitive Peak Forward Surge Current @ t = 1.0s |
IFSM |
600 |
MA |
| Power Dissipation (Note 1) |
Pd |
150 |
mW |
| Thermal Resistance Junction to Ambient Air (Note 1) |
RJA |
833 |
/W |
| Operating Temperature Range |
Tj |
-55 to +125 |
|
| Storage Temperature Range |
TSTG |
-65 to +150 |
| Technical/Catalog Information | BAS40-05T-7-F |
| Vendor | Diodes Inc (VA) |
| Category | Discrete Semiconductor Products |
| Diode Type | Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Voltage - DC Reverse (Vr) (Max) | 40V |
| Current - Average Rectified (Io) (per Diode) | 200mA (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 40mA |
| Current - Reverse Leakage @ Vr | 200nA @ 30V |
| Reverse Recovery Time (trr) | 5ns |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Mounting Type | Surface Mount |
| Package / Case | SOT-523 |
| Packaging | Cut Tape (CT) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BAS40 05T 7 F BAS4005T7F BAS40 05T FDICT ND BAS4005TFDICTND BAS40-05T-FDICT |
The BAS40-05V consists of two dual Schottky barrier diodes with common cathodes and integrated guard ringfor stress protection.
Two separate dice are encapsulated in a SOT666 ultra small SMD plastic package.
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VR | continuous reverse voltage | - | 40 | V | |
| IF | continuous forward current | - | 120 | mA | |
| IFRM | repetitive peak forward current | tp <1 s; <0.5 | - | 120 | mA |
| IFSM | non-repetitive peak forward current | t = 8.3 ms half sinewave; JEDEC method |
- | 200 | mA |
| Tstg | storage temperature | -65 | +150 | °C | |
| Tj | junction temperature | - | 150 | °C | |
| Tamb | operating ambient temperature | -65 | +150 | °C |
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