Features: · For high-speed switching applications· Internal (galvanic) isolated Diodes in one packageSpecifications Parameter Symbol Value Unit Diode reverse voltage VR 75 V Peak reverse voltage VRM 85 V Forward current IF 200 mA Surge forward c...
BAS 16S: Features: · For high-speed switching applications· Internal (galvanic) isolated Diodes in one packageSpecifications Parameter Symbol Value Unit Diode reverse voltage VR 75 ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
US $.1 - .11 / Piece
Diodes (General Purpose, Power, Switching) AF SCHOTTKY DIODE
Parameter |
Symbol |
Value |
Unit |
Diode reverse voltage |
VR |
75 |
V |
Peak reverse voltage |
VRM |
85 |
V |
Forward current |
IF |
200 |
mA |
Surge forward current t = 1 s |
IFS |
4.5 |
A |
Total power dissipation, TS = 85 °C |
Ptot |
250 |
mW |
Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
- 65 ...+150 |
°C |
Junction - ambient 1) |
RthJA |
530 |
K/W |
Junction - soldering point |
RthJS |
260 |
K/W |