BAS16VV T/R, BAS16VV-100V, BAS16VY Selling Leads, Datasheet
MFG:NXP Package Cooled:2009 D/C:65528
BAS16VV T/R, BAS16VV-100V, BAS16VY Datasheet download
Part Number: BAS16VV T/R
MFG: NXP
Package Cooled: 2009
D/C: 65528
MFG:NXP Package Cooled:2009 D/C:65528
BAS16VV T/R, BAS16VV-100V, BAS16VY Datasheet download
MFG: NXP
Package Cooled: 2009
D/C: 65528
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PDF/DataSheet Download
Datasheet: BAS 125W
File Size: 99356 KB
Manufacturer: Siemens Semiconductor Group
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BAS 125W
File Size: 99356 KB
Manufacturer: Siemens Semiconductor Group
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BAS16VY
File Size: 69474 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
Three electrically isolated high-speed switching diodes, encapsulated in very small SMD plastic packages.
Symbol | Parameter | Conditions | Min | Max | Unit |
VRRM | repetitive peak reverse voltage | - | 100 | V | |
VR | continuous reverse voltage | - | 100 | V | |
IF | continuous forward current | - | 200 | mA | |
IFRM | repetitive peak forward current | - | 450 | mA | |
IFSM | non-repetitive peak forward curren | square wave [1] | - | ||
tp = 1 s | - | 4.5 | A | ||
tp = 1 ms | - | 1 | A | ||
tp = 1 s | - | 0.5 | A | ||
Ptot | total power dissipation | - | |||
SOT666 | Tamb25 [2][3] | - | 180 | mW | |
SOT363 | Tsp = 85 [4] | - | 250 | mW | |
Tj | junction temperature | - | 150 | ||
Tamb | ambient temperature | -65 | +150 | ||
Tstg | storage temperature | -65 | +150 |