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B4S-E3/80, B4SGS, B4S-T3

B4S-E3/80, B4SGS, B4S-T3 Selling Leads, Datasheet

MFG:GENERAL SEMICONDUCTOR  D/C:09+

B4S-E3/80, B4SGS, B4S-T3 Picture

B4S-E3/80, B4SGS, B4S-T3 Datasheet download

Five Points

Part Number: B4S-E3/80

 

MFG: GENERAL SEMICONDUCTOR

Package Cooled:

D/C: 09+

 

 

 
 
 
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About B4SGS

PDF/DataSheet Download

Datasheet: B4SGS

File Size: 81523 KB

Manufacturer: COMCHIP [Comchip Technology]

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About B4SGS

PDF/DataSheet Download

Datasheet: B4SGS

File Size: 81523 KB

Manufacturer: COMCHIP [Comchip Technology]

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B4S-T3 Suppliers

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About B4S-T3

PDF/DataSheet Download

Datasheet: B4S-T3

File Size: 58693 KB

Manufacturer: WTE [Won-Top Electronics]

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  • B4SGS

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B4S-T3 Maximum Ratings

Characteristic Symbol B1S B2S B4S B6S B8S Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100 200 400 600 800 V
RMS Reverse Voltage VR(RMS) 70 140 280 420 560 V
Average Rectified Output Current @TA = 40°C IO 0.5 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM 30 A
I2t Rating for Fusing (t < 8.35ms) I2t 10 A2s
Forward Voltage per element @IF = 0.5A VFM 1.0 V
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @TA = 125°C
IRM 5.0
500
A
Typical Junction Capacitance (per leg) (Note 1) Cj 25 pF
Typical Thermal Resistance (per leg) (Note 2) RJA 85 K/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C

1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to ambient mounted on PC board with 13mm2 copper pads.

B4S-T3 Features

Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Surge Current Capability
Designed for Surface Mount Application
Plastic Material UL Recognition Flammability Classification 94V-O

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