AT60142FDS15ME, AT60142FT, AT60142FT5962R0520801V Selling Leads, Datasheet
MFG:ATMEL D/C:09+
AT60142FDS15ME, AT60142FT, AT60142FT5962R0520801V Datasheet download
Part Number: AT60142FDS15ME
MFG: ATMEL
Package Cooled:
D/C: 09+
Position: Home > DataSheet > Index A > AT6 Series > AT60142FDS15ME, AT60142FT, AT60142FT5962R0520801V
AT60142FDS15ME, AT60142FT, AT60142FT5962R0520801V
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Info of AT60142FDS15ME
Info of AT60142FT
Info of AT60142FT5962R0520801V
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About AT6
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About AT60142FT
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Datasheet: AT60142FT
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Manufacturer: ATMEL
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About AT6
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AT60142FT General Description
The AT60142F/FT are very low power CMOS static RAM organized as 524 288 x 8 bits.
Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Utilizing an array of six transistors (6T) memory cells, the AT60142F/FT combine an extremely low standby supply current (Typical value = 1 mA) with a fast access time at 15 ns over the full military temperature range.
The high stability of the 6T cell provides excellent protection against soft errors due to noise. The F version is biased at 3.3 V and is not 5V tolerant: it is available to 15 ns specification.
The FT version is a variant allowing for 5V tolerance: it is available in 17 ns specification.
The AT60142F/FT are processed according to the methods of the latest revision of the MIL PRF 38535 or ESCC 9000. It is produced on a radiation hardened 0.25 µm CMOS process.
AT60142FT Maximum Ratings
Supply Voltage to GND Potential:.........................-0.5V + 4.6V
DC Input Voltage:...................................GND -0.5V to 4.6V(1)
DC Output Voltage High Z State: ................GND -0.5V to 4.6V
Storage Temperature: ............................. -65°C to + 150°C
Output Current Into Outputs (Low): ............................ 20 mA
Electro Statics Discharge Voltage(2):.. ........> 4000V (MIL STD
883D Method 3015.3
Note: 1. 7V for FT version.
2. For AT60142F. It is better than 2000V for AT60142FT.
DC Input Voltage:...................................GND -0.5V to 4.6V(1)
DC Output Voltage High Z State: ................GND -0.5V to 4.6V
Storage Temperature: ............................. -65°C to + 150°C
Output Current Into Outputs (Low): ............................ 20 mA
Electro Statics Discharge Voltage(2):.. ........> 4000V (MIL STD
883D Method 3015.3
Note: 1. 7V for FT version.
2. For AT60142F. It is better than 2000V for AT60142FT.
AT60142FT Features
• Operating Voltage: 3.3V
• Access Time:
15 ns for 3.3V biased only (AT60142F)
17 ns for 5V Tolerant (AT60142FT)
• Very Low Power Consumption
Active: 650 mW (Max) @ 15 ns, 540 mW (Max) @ 25 ns
Standby: 3.5 mW (Typ)
• Wide Temperature Range: -55 to +125°C
• TTL-Compatible Inputs and Outputs
• Asynchronous
• Designed on 0.25 µm Radiation Hardened Process
• No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2
• Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
• 500 Mils Wide FP36 Package
• ESD Better than 4000V for the AT60142F
• ESD Better than 2000V for the AT60142FT
• Quality Grades: ESCC, QML-Q or V with smd 5962-05208
• Access Time:
15 ns for 3.3V biased only (AT60142F)
17 ns for 5V Tolerant (AT60142FT)
• Very Low Power Consumption
Active: 650 mW (Max) @ 15 ns, 540 mW (Max) @ 25 ns
Standby: 3.5 mW (Typ)
• Wide Temperature Range: -55 to +125°C
• TTL-Compatible Inputs and Outputs
• Asynchronous
• Designed on 0.25 µm Radiation Hardened Process
• No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2
• Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
• 500 Mils Wide FP36 Package
• ESD Better than 4000V for the AT60142F
• ESD Better than 2000V for the AT60142FT
• Quality Grades: ESCC, QML-Q or V with smd 5962-05208
AT60142FT Connection Diagram
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