AT60142H

The AT60142H is designed as one kind of very low power CMOS static RAM device that is processed according to the methods of the latest revision of the MIL PRF 38535 or ESCC 9000. And this device is produced on a radiation hardened 0.25 m CMOS process, and the high stability of the 6T cell provides excellent protection against soft errors due to noise.

Features of the AT60142H are:(1)Wide Temperature Range: -55 to +125 ; (2)TTL-Compatible Inputs and Outputs; (3)Asynchronous; (4)Designed on 0.25 um Radiation Hardened Process; (5)No Single Event Latch Up below LET Threshold of 80 MeV / mg / cm2 @125; (6)Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019; (7)500 Mils Wide FP36 Package; (8)ESD better than 4000V; (9)Operating Voltage: 3.3V.

The absolute maximum ratings of the AT60142H can be summarized as:(1)Supply Voltage to GND Potential: -0.5V to +4.6V;(2)Voltage range on any input: GND-0.5V to 4.6V;(3)Voltage range on any ouput: GND-0.5V to 4.6V;(4)Storage Temperature: -65 to +150 ;(5)Output Current from Output Pins: 20 mA;(6)Electrostatic Discharge Voltage (MIL STD 883D Method 3015): > 4000 V. If you want to know more information about the AT60142H, please download the datasheet in www.seekic.com or www.chinaicmart.com .