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AO7415, AO742391, AO7600

Table of contents:
Info of AO7415
Info of AO742391
Info of AO7600

AO7415, AO742391, AO7600 Selling Leads, Datasheet

MFG:Alpha & Omega Semiconductor Inc Category:Discrete Semiconductor Products Package Cooled:SOT-363 D/C:09+(ROHS)

AO7415, AO742391, AO7600 Datasheet download

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Part Number: AO7600

Category: Discrete Semiconductor Products

MFG: Alpha & Omega Semiconductor Inc

Package Cooled: SOT-363

D/C: 09+(ROHS)

Description: MOSFET N/P-CH COMPL 20V SC70-6

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AO7415 Parameters

Technical/Catalog Information	AO7415
Vendor	Alpha & Omega Semiconductor Inc (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	2A
Rds On (Max) @ Id, Vgs	100 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	620pF @ 10V
Power - Max	625mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	6nC @ 4.5V
Package / Case	SC-70-6
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AO7415 AO7415 785 1092 6 ND 78510926ND 785-1092-6

AO7415 General Description

The AO7415 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT363 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected to 2KV HBM. Standard product AO7415 is Pb-free (meets ROHS & Sony 259 specifications). AO7415L is a Green Product ordering option. AO7415 and AO7415L are electrically identical.

AO7415 Maximum Ratings

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		V_DS	-20	V
Gate-Source Voltage		V_GS	±12	V
Continuous Drain Current A	TA=25°C	I_D	-2	A
Continuous Drain Current A	TA=70°C	I_D	-1.6	A
Pulsed Drain Current B		I_DM	-8	A
Power Dissipation A	TA=25°C	P_D	0.625	W
Power Dissipation A	TA=70°C	P_D	0.4	W
Junction and Storage Temperature Range		T_J, T_STG	-55 to 150	°C

AO7415 Features

`V _{DS (V)} = -20V
`I_D = -2A (V_GS = -10V)
`R _DS(ON) < 100m (VG_S = -10V)
`R _DS(ON) < 125m (V_GS = -4.5V)
`R _DS(ON) < 170m (V_GS = -2.5V)

AO7600 Parameters

Technical/Catalog Information	AO7600
Vendor	Alpha & Omega Semiconductor Inc
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	900mA, 600mA
Rds On (Max) @ Id, Vgs	300 mOhm @ 900mA, 4.5V
Input Capacitance (Ciss) @ Vds	120pF @ 10V
Power - Max	300mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	1.9nC @ 4.5V
Package / Case	SC-70-6, SOT-323-6
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AO7600 AO7600 785 1093 2 ND 78510932ND 785-1093-2

AO7600 General Description

The AO7600 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, an inverter, and for a host of other applications. Both devices are ESD protected. Standard Product AO7600 is Pb-free (meets ROHS & Sony 259 specifications). AO7600L is a Green Product ordering option. AO7600 and AO7600L are electrically identical.

AO7600 Maximum Ratings

Paramete		Symbol	Max n-channel	Max p-channel	Units
Drain-Source Voltage		V_DS	20	-20	V
Gate-Source Voltage		V_GS	±8	±8	V
Continuous Drain Current ^A	T_A=25°C	I_D	0.9	-0.6	A
Continuous Drain Current ^A	T_A=70°C	I_D	0.7	-0.48
Pulsed Drain Current^B		I_DM	5	-3
Power Dissipation	T_A=25°C	P_D	0.3	0.3	W
Power Dissipation	T_A=70°C	P_D	0.19	0.19	W
Junction and Storage Temperature Range		T_J, T_STG	-55 to 150	-55 to 150	°C

AO7600 Features

n-channel                                 p-channel
V_DS(V) = 20V                            -20V
I_D= 0.9A (VGS=4.5V)               -0.6A (V_GS=-4.5V)
R_DS(ON)                                   R_DS(ON)< 300m (V_GS=4.5V)               < 550m (V_GS=-4.5V)
< 350m (V_GS=2.5V)               < 700m (V_GS=-2.5V)
< 450m (V_GS=1.8V)               < 950m (V_GS=-1.8V)

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