8MX8, 8N50, 8N60 Selling Leads, Datasheet
MFG:SDRAM Package Cooled:TSSOP D/C:99+
8MX8, 8N50, 8N60
- Table of contents:
Info of 8MX8
Info of 8N50
Info of 8N60
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About 8N60
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Datasheet: 8N60
File Size: 216532 KB
Manufacturer: UTC [ Unisonic Technologies ]
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8N60 General Description
The 8N60 is the abbreviation of UTC8N60. This device is designed as the high voltage and high current power MOSFET that have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
Features of the UTC8N60 are:(1)improved dv/dt capability, high ruggedness;(2)avalanche energy specified;(3)fast switching capability;(4)low reverse transfer capacitance (CRSS=typical 12.0 pF);(5)ultra low gate charge (typical 28 nC);(6)RDS(ON)=1.2 @VGS=10 V.
The absolute maximum ratings of the UTC8N60 can be summarized as:(1)drain-source voltage:650 V;(2)gate-source voltage:±30 V;(3)avalanche current:7.5 A;(4)continuous drain current (Tc=25°C):7.5 A;(5)continuous drain current (Tc=100°C):4.6 A;(6)pulsed drain current:30 A;(7)avalanche energy single pulsed:230 mJ;(8)avalanche energy repetitive:14.7 mJ;(9)peak diode recovery dv/dt:4.5 V/ns;(10)power dissipation:147 W (TO-220) or 48 W (TO-220F);(11)junction temperature:+150 ;(12)storage temperature:-55 to +150 ;(13)operating temperature:-55 to +150 . If you want to know more information such as the electrical characteristics about the UTC8N60, please download the datasheet in www.seekic.com or www.chinaicmart.com .
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