70MT80KB, 70N03, 70N06 Selling Leads, Datasheet
MFG:IR Package Cooled:70A/800V/DIODE/6U D/C:N/A
70MT80KB, 70N03, 70N06 Datasheet download
Part Number: 70MT80KB
MFG: IR
Package Cooled: 70A/800V/DIODE/6U
D/C: N/A
70MT80KB, 70N03, 70N06
- Table of contents:
Info of 70MT80KB
Info of 70N03
Info of 70N06
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About 70MT80KB
PDF/DataSheet Download
Datasheet: 70MT80KB
File Size: 97483 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About 70N00000Z
PDF/DataSheet Download
Datasheet: 70N00000Z
File Size: 103028 KB
Manufacturer: LITTELFUSE [Littelfuse]
Download : Click here to Download
About 70N00000Z
PDF/DataSheet Download
Datasheet: 70N00000Z
File Size: 103028 KB
Manufacturer: LITTELFUSE [Littelfuse]
Download : Click here to Download
70N06 General Description
The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.
70N06 Maximum Ratings
|
Characteristics |
PARAMETER |
Rating |
Unit |
| Drain-Source Voltage |
VDSS |
60 |
V |
| Gate to Source Voltage |
VGSS |
±20 |
V |
| Continuous Drain Current TC = 25 TC = 25 |
ID |
70 |
A |
|
56 |
A | ||
| Drain Current Pulsed |
IDM |
280 |
A |
| Single Pulse Avalanche Energy |
EAS |
600 |
mJ |
| Repetitive Avalanche Energy |
EAR |
20 |
mJ |
| Peak Diode Recovery dv/dt |
dv/dt |
10 |
V/ns |
| Total Power Dissipation |
PD |
200 |
W |
| Derating Factor above 25 |
1.4 |
W/ | |
| Junction and Storage Temperature Range |
Tj,Tstg |
−55~150 |
70N06 Features
* RDS(ON) = 15m@VGS = 10 V
* Ultra low gate charge ( typical 90 nC )
* Low reverse transfer Capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
* Ultra low gate charge ( typical 90 nC )
* Low reverse transfer Capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
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