6N60, 6N80, 6N90 Selling Leads, Datasheet
MFG:. Package Cooled:263 D/C:06+
MFG:. Package Cooled:263 D/C:06+
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Datasheet: 6N60
File Size: 180157 KB
Manufacturer: UTC
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Datasheet: 6N80
File Size: 89444 KB
Manufacturer: IXYS [IXYS Corporation]
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PDF/DataSheet Download
Datasheet:
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Manufacturer:
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The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
PARAMETER |
SYMBOL |
RATINGS |
UNIT | |
Drain-Source Voltage | 6N60-A |
VDSS |
600 |
V |
6N60-B |
650 | |||
Gate-Source Voltage |
VGSS |
±30 |
V | |
Avalanche Current (Note 1) |
IAR |
6.2 |
A | |
Continuous Drain Current | TC = 25°C |
ID |
6.2 |
A |
TC = 100°C |
3.9 | |||
Pulsed Drain Current (Note 1) |
IDM |
24.8 |
A | |
Avalanche Energy | Single Pulsed (Note 2) |
EAS |
440 |
mJ |
Repetitive (Note 1) |
EAR |
13 | ||
Power Dissipation |
PD |
62.5 |
W | |
Junction Temperature |
TJ |
+150 |
||
Operating Temperature |
TOPR |
-55 ~ +150 |
||
Storage Temperature |
TSTG |
-55 ~ +150 |
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.